K1338.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 K1338 데이타시트 다운로드

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2SK1338
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S

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2SK1338
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
www.DataSheet4U2..coVmalue at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
2
6
2
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 900
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
0.9
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
5.0
1.5
425
175
85
10
35
60
50
0.9
700
Max
±10
250
3.0
7.0
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *1
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 30
IF = 2 A, VGS = 0
IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
2

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Power vs. Temperature Derating
60
40
20
0 50 100
www.DataSheet4U.com Case Temperature TC (°C)
150
Typical Output Characteristics
5
Pulse Test
10 V
4 6V
5.5 V
3
5.0 V
2
4.5 V
1
4.0 V
VGS = 3.0 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
2SK1338
Maximum Safe Operation Area
10
5
2
1
1
100
ms
µs
0.5
0.2
0.1 Ta = 25°C
0.05
0.02
0.01
1
3
10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 20 V
Pulse Test
4
–25°C
3 TC = 25°C
75°C
2
1
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
3

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2SK1338
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
30
20 ID = 3 A
2A
10
1A
www.DataSheet4U0.com 4
8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
VGS = 10 V
Pulse Test
16
ID = 3 A
12 2 A
1A
8
4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10 VGS = 10 V
5
15 V
2
1
0.5
0.05 0.1 0.2
0.5 1
2
Drain Current ID (A)
5
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
Pulse Test
2
1
–25°C
0.5 TC = 25°C
75°C
0.2
0.1
0.05
0.1 0.2 0.5 1 2
Drain Current ID (A)
5
4

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5,000
2,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
500
200
100
50
www.DataSheet4U.co0m.05 0.1 0.2
0.5 1 2
Reverse Drain Current IDR (A)
5
1,000
800
600
400
200
0
Dynamic Input Characteristics
VDD = 250 V
400 V
600 V
VDS
VGS
20
16
12
8
VDD = 600 V
400 V
250 V
ID = 2 A
8 16 24 32
Gate Charge Qg (nc)
4
0
40
1,000
100
2SK1338
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
10 Crss
VGS = 0
f = 1 MHz
1
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
100 td (off)
50 tf
tr
20
10 td (on)
5
0.05
0.1 0.2 0.5 1 2
Drain Current ID (A)
5
5