T1030-600W.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 T1030-600W 데이타시트 다운로드

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T1020-600W
® T1030-600W
SNUBBERLESS TRIAC
FEATURES
s ITRMS = 10 A
s VDRM = VRRM = 600V
s EXCELLENT SWITCHING PERFORMANCES
s INSULATING VOLTAGE = 1500V(RMS)
s U.L. RECOGNIZED : E81734
A2 A1
G
DESCRIPTION
The T1020-600W and 1030-600W triacs use high
performance glass passivated chip technology,
housed in a fully molded plastic ISOWATT220AB
package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
Parameter
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t
dI/dt
I2t Value (half-cycle, 50 Hz)
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Tstg Storage temperature range
Tj Operating junction temperature range
Tc= 90°C
Value
10
Unit
A
tp = 16.7 ms
(1 cycle, 60 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
Repetitive
F = 50 Hz
Non Repetitive
110
125
78
20
100
- 40 to + 150
- 40 to + 125
A
A2s
A/µs
°C
Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
Value
600
Unit
V
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September 2001 - Ed: 1A
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T1020-600W / 1030-600W
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-c) Junction to case for A.C (360° conduction angle)
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 100 mW PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1020 T1030 Unit
IGT VD=12V (DC) RL=33
VGT VD=12V (DC) RL=33
Tj= 25°C
Tj= 25°C
I-II-III
I-II-III
MAX
MAX
20 30
1.5
mA
V
VGD VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG=500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH *
VTM *
IT= 100mA Gate open
ITM= 14A tp= 380µs
Tj= 25°C
Tj= 25°C
MAX
MAX
35 50
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt *
Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
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Fig.1 : Maximum power dissipation versus RMS
on-state current.
T1020-600W / 1030-600W
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
14
180 O
o
= 180
12
o
= 120
10
o
= 90
8o
= 60
6 = 30 o
4
2 I T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
Fig.3 : RMS on-state current versus case temper-
ature.
P (W)
14
12
10
Tcase (oC)
Rth = 0 o C/W
2.5 o C/W
5o C/W
7 o C/W
-85
-95
8
-105
6
4 -115
2 Tamb (oC)
0 -125
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I T(RMS)(A)
12
10
8 = 180o
6
4
2
Tcase(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
Ih
1.2
1.0
0.8
0.6
0.4
-40
Tj(oC)
-20 0 20
40
60
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80 100 120 140
Zth/Rth
1
Zth(j-c)
0.1
0.01
Zth(j-a)
1E-3
1E-2
1E-1 1E+0 1E+1
tp(s)
1E+2 5E+2
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
120
100
80
60
40
20
Number of cycles
0
1 10
Tj initial = 25oC
100 1000
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T1020-600W / 1030-600W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ® 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum val-
ues).
I TSM (A). I2 t (A2 s)
1000
Tj initial = 25oC
100
I2 t
ITSM
I TM (A)
1000
100
Tj initial
25oC
10
1
1
tp(ms)
10
10
Tj max
Tj max
Vto =0.9V
Rt =0.038
VTM(V)
1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
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PACKAGE MECHANICAL DATA
ISOWATT220AB
s Cooling method: C
s Marking: Type number
s Weight: 2.1 g
s Recommended torque value: 0.55 m.N.
s Maximum torque value: 0.70 m.N.
T1020-600W / 1030-600W
REF.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60
2.50 2.70
2.50 2.75
0.40 0.70
0.75 1.00
1.15 1.70
1.15 1.70
4.95 5.20
2.40 2.70
10.00 10.40
16.00 typ.
28.60 30.60
9.80 10.60
15.90 16.40
9.00 9.30
3.00 3.20
0.173 0.181
0.098 0.106
0.098 0.108
0.016 0.028
0.030 0.039
0.045 0.067
0.045 0.067
0.195 0.205
0.094 0.106
0.394 0.409
0.630 typ.
1.125 1.205
0.386 0.417
0.626 0.646
0.354 0.366
0.118 0.126
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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