T1020W.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 T1020W 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
T1020W
® T1030W
SNUBBERLESS TRIAC
FEATURES
ITRMS = 10 A
VDRM = VRRM = 400V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
DESCRIPTION
The T1020/1030W triacs use high performance
glass passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A2
A1
G
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
Value
Unit
RMS on-state current
(360° conduction angle)
Tc= 90°C
10 A
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
110
A
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
125
78
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
20 A/µs
Non Repetitive
100
Storage temperature range
Operating junction temperature range
- 40 to + 150 °C
- 40 to + 125
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260 °C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
www.DataSheet4U.com
November 1996
T1020 / 1030-xxxW
400 600 700 800
400 600 700 800
Unit
V
1/5

No Preview Available !

www.DataSheet4U.com
T1020W / 1030W
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1020 T1030 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20
30 mA
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG = 500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH * IT= 100mA Gate open
Tj= 25°C
MAX 35
50
VTM * ITM= 14A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt * Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
www.DataSheet4U.com
2/5
®

No Preview Available !

www.DataSheet4U.com
Fig.1 : Maximum power dissipation versus RMS
on-state current.
T1020W / 1030W
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
14
180 O
= 180o
12
= 120o
10
= 90o
8 = 60o
6 = 30o
4
2 I T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
Fig.3 : RMS on-state current versus case tempera-
ture.
P (W)
14
12
10
Tcase (oC)
Rth = 0 o C/W
2.5o C/W
5o C/W
7o C/W
-85
-95
8
-105
6
4 -115
2 Tamb (oC)
0 -125
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I T(RMS)(A)
12
10
8 = 180o
6
4
2
Tcas e(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
0.4
-40
Tj(oC)
-20 0 20
40
60
www.DataSheet4U.com
80 100 120 140
®
Zth/Rth
1
Zth (j-c)
0.1
0.01
Zt h( j-a)
1E-3
1E-2
1E-1 1E +0
1E +1
tp (s)
1E+2 5E+2
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
120
100
80
60
40
20
Number of cycles
0
1 10
Tj initial = 25oC
100 1000
3/5