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T1020W
® T1030W
SNUBBERLESS TRIAC
FEATURES
ITRMS = 10 A
VDRM = VRRM = 400V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
DESCRIPTION
The T1020/1030W triacs use high performance
glass passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A2
A1
G
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
Value
Unit
RMS on-state current
(360° conduction angle)
Tc= 90°C
10 A
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
110
A
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
125
78
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
20 A/µs
Non Repetitive
100
Storage temperature range
Operating junction temperature range
- 40 to + 150 °C
- 40 to + 125
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260 °C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
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November 1996
T1020 / 1030-xxxW
400 600 700 800
400 600 700 800
Unit
V
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T1020W / 1030W
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1020 T1030 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20
30 mA
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG = 500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH * IT= 100mA Gate open
Tj= 25°C
MAX 35
50
VTM * ITM= 14A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt * Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
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Fig.1 : Maximum power dissipation versus RMS
on-state current.
T1020W / 1030W
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
14
180 O
= 180o
12
= 120o
10
= 90o
8 = 60o
6 = 30o
4
2 I T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
Fig.3 : RMS on-state current versus case tempera-
ture.
P (W)
14
12
10
Tcase (oC)
Rth = 0 o C/W
2.5o C/W
5o C/W
7o C/W
-85
-95
8
-105
6
4 -115
2 Tamb (oC)
0 -125
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I T(RMS)(A)
12
10
8 = 180o
6
4
2
Tcas e(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
0.4
-40
Tj(oC)
-20 0 20
40
60
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80 100 120 140
®
Zth/Rth
1
Zth (j-c)
0.1
0.01
Zt h( j-a)
1E-3
1E-2
1E-1 1E +0
1E +1
tp (s)
1E+2 5E+2
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
120
100
80
60
40
20
Number of cycles
0
1 10
Tj initial = 25oC
100 1000
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T1020W / 1030W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
I TSM (A). I2 t (A2s)
1000
Tj initial = 25oC
100
I2 t
ITSM
I TM (A)
1000
100
Tj initial
25oC
10
10
Tj max
Tj max
Vto =0.9V
Rt =0.038
tp(ms)
VTM(V)
11
1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
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PACKAGE MECHANICAL DATA
ISOWATT220AB
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
T1020W / 1030W
REF.
A
B
B1
C
D
E
H
I
J
L
M
N
N1
O
P
DIMENSIONS
Millimeters
Inches
Min. Max.
10 10.4
15.9 16.4
9.8 10.6
28.6 30.6
16 typ
9 9.3
4.4 4.6
3 3.2
2.5 2.7
0.4 0.7
2.5 2.75
4.95 5.2
2.4 2.7
1.15 1.7
0.75 1
Min. Max.
0.393 0.409
0.626 0.645
0.385 0.417
1.126 1.204
0.630 typ
0.354 0.366
0.173 0.181
0.118 0.126
0.098 0.106
0.015 0.027
0.098 0.108
0.195 0.204
0.094 0.106
0.045 0.067
0.030 0.039
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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