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Only One Name Means ProTek’Tion™
P0402FC3.3C*
thru
P0402FC36C*
FLIP CHIP ARRAY
APPLICATIONS
Cellular Phones
MCM Boards
Wireless Communication Circuits
IR LEDs
SMART & PCMCIA Cards
IEC COMPATIBILITY (EN61000-4)
61000-4-2 (ESD): Air - 15kV, Contact - 8kV
61000-4-4 (EFT): 40A - 5/50ns
FEATURES
ESD Protection > 25 kilovolts
Available in Multiple Voltage Types Ranging From 3.3V to 36V
250 Watts Peak Pulse Power per Line (tp = 8/20µs)
Bidirectional Configuration & Monolithic Structure
Protects 1 Line
RoHS Compliant in Lead-Free Versions
MECHANICAL CHARACTERISTICS
Standard EIA Chip Size: 0402
Weight 0.73 milligrams (Approximate)
Available in Tin-Lead or Lead-Free Plating
Solder Reflow Temperature:
Tin-Lead - Sn/Pb, 85/15: 240-245°C
Lead-Free - Sn/Ag/Cu, 96/3.5/0.5: 260-270°C
Flammability Rating UL 94V-0
8mm Plastic & Paper Tape and Reel Per EIA Standard 481
Device Marking On Reel
Top Contacts: Solder Bump 0.004” in Height (Nominal)
PIN CONFIGURATION
0402
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05107.R9 4/05
1
*U.S. Patent No. Des. “D456,367S”
www.protekdevices.com

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DEVICE CHARACTERISTICS
P0402FC3.3C*
thru
P0402FC36C*
MAXIMUM RATINGS @ 25°C Unless Otherwise Specified
PARAMETER
SYMBOL
Peak Pulse Power (tp = 8/20µs) - See Figure 1
Operating Temperature
Storage Temperature
P
PP
TJ
TSTG
VALUE
250
-55°C to 150°C
-55°C to 150°C
UNITS
Watts
°C
°C
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless Otherwise Specified
PART
NUMBER
(See Note 1)
RATED
STAND-OFF
VOLTAGE
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE
(See Fig. 2)
MAXIMUM
CLAMPING
VOLTAGE
(See Fig. 2)
MAXIMUM
LEAKAGE
CURRENT
(See Note 2)
TYPICAL
CAPACITANCE
VWM
VOLTS
@ 1mA
V(BR)
VOLTS
@ IP = 1A
VC
VOLTS
@8/20µs
VC @ IPP
@VWM
ID
µA
P0402FC3.3C
P0402FC05C
P0402FC08C
P0402FC12C
P0402FC15C
P0402FC24C
P0402FC36C
3.3
5.0
8.0
12.0
15.0
24.0
36.0
4.0
6.0
8.5
13.3
16.7
26.7
40.0
7.0
9.8
13.4
19.0
24.0
43.0
64.0
12.5V @ 20A
14.7V @ 17A
19.2V @ 13A
29.7V @ 9.0A
35.7V @ 7.0A
55.0V @ 5.0A
84.0V @ 3.0A
75*
10**
10***
1
1
1
1
Note 1: All devices are bidirectional. Electrical characteristics apply in both directions.
Note 2: *Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current <500nA @ 3.3V. ***Maximum leakage current <200nA @ 5V.
@0V, 1 MHz
C
pF
150
100
75
50
40
30
25
10,000
1,000
100
FIGURE 1
PEAK PULSE POWER VS PULSE TIME
250W, 8/20µs Waveform
10
0.01
1
10 100
td - Pulse Duration - µs
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1,000
10,000
120
100
80
60
40
20
0
0
FIGURE 2
PULSE WAVE FORM
TEST
tf Peak Value IPP WAVEFORM
PARAMETERS
tf = 8µs
e-t td = 20µs
t=
d
t
IPP/2
5
10 15
20 25
30
t - Time - µs
05107.R9 4/05
*U.S. Patent No. Des. “D456,367S”
2 www.protekdevices.com

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GRAPHS
P0402FC3.3C*
thru
P0402FC24C*
FIGURE 3
POWER DERATING CURVE
100
Peak Pulse Power
8/20µs
80
60
40
20
0
0
Average Power
25 50 75 100 125 150
TL - Lead Temperature - °C
FIGURE 4
OVERSHOOT & CLAMPING VOLTAGE FOR P0402FC05C
35
25
15
5
-5
ESD Test Pulse - 25 kilovolt, 1/30ns (waveshape)
FIGURE 5
TYPICAL CLAMPING VOLTAGE VS PEAK PULSE CURRENT FOR P0402FC05C
14
12
10
8
6
4
2
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0
0
05107.R9 4/05
5 10 15
IPP - Peak Pulse Current - Amps
3
20
*U.S. Patent No. Des. “D456,367S”
www.protekdevices.com