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MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol
VCEO
VEB
IC
Value
80
5
10
20
Unit
Vdc
Vdc
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
50 W
1.67 W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
2.0
0.016
−55 to 150
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
75 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MJB44H11
MJB44H11G
MJB44H11T4
Package
D2PAK
D2PAK
(Pb−Free)
D2PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
MJB44H11T4G
MJB45H11
D2PAK
(Pb−Free)
D2PAK
800/Tape & Reel
50 Units/Rail
MJB45H11G
MJB45H11T4
D2PAK
(Pb−Free)
D2PAK
50 Units/Rail
800/Tape & Reel
MJB45H11T4G
D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
Publication Order Number:
MJB44H11/D

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MJB44H11 (NPN), MJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11
MJB45H11
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJB44H11
MJB45H11
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11
MJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11
MJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11
MJB45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min Typ Max Unit
80 −
− Vdc
− − 10 mA
− − 50 mA
− − 1.0 Vdc
− − 1.5 Vdc
60 − − −
40 −
− 130 −
− 230 −
pF
MHz
− 50 −
− 40 −
− 300 −
− 135 −
− 500 −
− 500 −
− 140 −
− 100 −
ns
ns
ns
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1
0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
500 1.0 k
Figure 1. Thermal Response
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MJB44H11 (NPN), MJB45H11 (PNP)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
TC 70° C
DUTY CYCLE 50%
dc
1.0 ms
100 ms
10 ms
1.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TA TC
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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MJB44H11 (NPN), MJB45H11 (PNP)
1000 1000
100
TJ = 25°C
VCE = 4 V
VCE = 1 V
100
TJ = 25°C
VCE = 4 V
1V
10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJB44H11 DC Current Gain
10
10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. MJB45H11 DC Current Gain
10
1000
TJ = 125°C
25°C
100
−40 °C
10
0.1
VCE = 1 V
1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJB44H11 Current Gain
versus Temperature
1000
TJ = 125°C
25°C
−40 °C
100
VCE = 1 V
10
10 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 7. MJB45H11 Current Gain
versus Temperature
10
1.2
1
0.8
0.6
0.4
0.2
0
0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 8. MJB44H11 On−Voltages
1.2
1
0.8
0.6
0.4
0.2
0
10 0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJB45H11 On−Voltages
10
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MJB44H11 (NPN), MJB45H11 (PNP)
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
L
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
5.08
0.20
17.02
0.67
3.05
0.12
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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