Z0607MA.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 Z0607MA 데이타시트 다운로드

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®
STANDARD
Table 1: Main Features
Symbol
Value
IT(RMS)
0.8
VDRM/VRRM
600
IGT (Q1)
5
Unit
A
V
mA
Z00607MA
0.8A TRIAC
A2
G
A1
DESCRIPTION
The Z00607MA is suitable for low power AC
switching applications, such as fan speed, small
light controllers...
Thanks to low gate triggering current, it can be
directly driven by microcontrollers.
A1
G
A2
TO-92
www.DataSheet4U.comTable 2: Order Codes
Part Numbers
Marking
Z00607MA 1BA2
Z0607MA
Z00607MA 2BL2
Z0607MA
Z00607MA 5BL2
Z0607MA
Table 3: Absolute Maximum Ratings
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25°C) F = 60 Hz
I²t I²t Value for fusing
tp = 10 ms
dI/dt
Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tl = 50°C
t = 20 ms
t = 16.7 ms
Value
0.8
9
9.5
0.45
Unit
A
A
A²s
Tj = 110°C
20
A/µs
Tj = 110°C
Tj = 110°C
1
0.1
- 40 to + 150
- 40 to + 110
A
W
°C
September 2005
REV. 7
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Z00607MA
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
IGT (1)
VGT
VD = 12 V RL = 30 Ω
I - II - III
IV
ALL
MAX.
MAX.
VGD VD = VDRM RL = 3.3 kΩ Tj = 110°C
ALL MIN.
IH (2) IT = 200 mA
MAX.
IL IG = 1.2 IGT
I - III - IV
MAX.
II
dV/dt (2) VD = 67 %VDRM gate open Tj = 110°C
MIN.
(dI/dt)c (2) (dV/dt)c = 0.35 A/ms Tj = 110°C
MIN.
Value
5
7
1.3
0.2
5
10
20
10
1.5
Unit
mA
V
V
mA
mA
V/µs
A/ms
Table 5: Static Characteristics
Symbol
Test Conditions
Value
VTM (2) ITM = 1.1 A tp = 380 µs
Tj = 25°C
MAX.
1.5
Vto (2) Threshold voltage
Tj = 110°C
MAX.
0.95
Rd (2) Dynamic resistance
Tj = 110°C
MAX.
420
IDRM
IRRM
VDRM = VRRM = 600 V
Tj = 25°C
Tj = 110°C
MAX.
5
0.1
Note 1: minimum IGT is guaranted at 5% of IGT max.
www.DataSheet4U.comNote 2: for both polarities of A2 referenced to A1.
Table 6: Thermal resistances
Symbol
Rth(j-I)
Rth(j-a)
Junction to lead (A.C.)
Junction to ambient
Parameter
Value
60
150
Unit
V
V
mΩ
µA
mA
Unit
°C/W
°C/W
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: RMS on-state current versus ambient
temperature (full cycle)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 IT(RMS)(A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS)(A)
1.0
0.9
Rth(j-a) = Rth(j-l)
0.8
0.7
0.6 Rth(j-a) = 150°C/W
0.5
0.4
0.3
0.2
0.1 Tamb (°C)
0.0
0 10 20 30 40 50 60 70 80 90 100 110
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Z00607MA
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj (°C)
0.0
-40 -20 0 20 40 60
80 100 120
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
ITSM (A)
10
ITSM (A), I2t (A2s)
200.0
9 100.0
8
t=20ms
dI/dt limitation:
7
One cycle
20A/µs
Non repetitive
6 Tj initial = 25°C
www.DataSheet4U.com5
10.0
4 Repetitive
Tamb = 25°C
3
1.0
2
1
Number of cycles
0
tp (ms)
0.1
1
10
100
1000
0.01
0.10
1.00
Tj initial = 25°C
ITSM
I2t
10.00
Figure 7: On-state characteristics (maximum
values)
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
ITM(A)
10.0
Tj = Tjmax.
1.0
Tj = 25°C
Tj=max.
Vt0=0.95 V
Rd=420 mΩ
VTM (V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
8.0
6.0
4.0
2.0
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
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