GT20J321.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 GT20J321 데이타시트 다운로드

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GT20J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
The 4th generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 µs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
Low saturation voltage: VCE (sat) = 2.0 V (typ.)
FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
20
40
20
40
45
150
55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
2.78
4.23
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
JEITA
TOSHIBA
2-10R1C
Weight: 1.7 g (typ.)
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GT20J321
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching
loss
Turn-off switching
loss
Peak forward voltage
Reverse recovery time
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
Eon
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 20 A
VGG = +15 V, RG = 33
(Note 1)
(Note 2)
3.5
Eoff
VF IF = 20 A, VGE = 0
trr IF = 20 A, di/dt = 100 A/µs
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max
2.0
3000
0.06
±500
1.0
6.5
2.45
0.04
0.17
0.24
0.04
0.34
0.40
0.43
100
2.1
Unit
nA
mA
V
V
pF
µs
mJ
V
ns
VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0
VCE
10%
td (off)
10%
tf
toff
10%
90%
10%
td (on)
tr
ton
10%
Note 2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
Eoff
5%
Eon
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40
Common
emitter
Tc = 25°C
30
IC – VCE
20 15
9
20 8
10
VGE = 7 V
0
012345
Collector-emitter voltage VCE (V)
GT20J321
VCE – VGE
20
Common
emitter
Tc = 40°C
16
12
8
40
10 20
4
IC = 5 A
0
048
12 16
Gate-emitter voltage VGE (V)
20
VCE – VGE
20
Common
emitter
Tc = 25°C
16
12
8
40
10
4
20
IC = 5 A
0
048
12 16
Gate-emitter voltage VGE (V)
20
VCE – VGE
20
Common
emitter
Tc = 125°C
16
12
8
10
4
IC = 5 A
40
20
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
20
IC – VGE
40
Common
emitter
VCE = 5 V
30
20
10
Tc = 125°C
40
25
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
20
5
Common
emitter
VGE = 15 V
4
VCE (sat) – Tc
3
2
1
40
30
20
10
IC = 5 A
0
60 20
20
60 100 140
Case temperature Tc (°C)
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Switching time ton, tr, td (on) – RG
3 Common emitter
VCC = 300 V
VGG = 15 V
1
IC = 20 A
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.3
0.1
0.03
ton
td (on)
tr
0.01
1
3 10 30 100 300
Gate resistance RG ()
1000
GT20J321
Switching time ton, tr, td (on) – IC
3 Common emitter
VCC = 300 V
VGG = 15 V
1
RG = 33
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.3
ton
0.1
td (off)
0.03
0.01
0
tr
4
8 12 16
Collector current IC (A)
20
Switching time toff, tf, td (off) – RG
10
Common emitter
VCC = 300 V
3
VGG = 15 V
IC = 20 A
: Tc = 25°C
: Tc = 125°C
1 (Note 1)
0.3 toff
td (off)
0.1
0.03
0.01
1
tf
3 10 30 100 300
Gate resistance RG ()
1000
Switching time toff, tf, td (off) – IC
10
Common emitter
VCC = 300 V
3 VGG = 15 V
RG = 33
: Tc = 25°C
1
: Tc = 125°C
toff (Note 1)
td (off)
0.3
0.1
0.03
tf
0.01
0
4 8 12 16
Collector current IC (A)
20
Switching loss Eon, Eoff – RG
10
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
3
: Tc = 25°C
: Tc = 125°C
(Note 2)
1 Eon
0.3 Eoff
0.1
1 3 10 30 100 300 1000
Gate resistance RG ()
Switching loss Eon, Eoff – IC
10
Common emitter
VCC = 300 V
VGG = 15 V
3 IC = 20 A
: Tc = 25°C
: Tc = 125°C
1 (Note 2)
Eon
0.3
0.1 Eoff
0.03
0
4 8 12 16
Collector current IC (A)
20
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10000
3000
1000
C – VCE
Cies
300
100
Coes
30 Common emitter
VGE = 0
10 f = 1 MHz
Cres
Tc = 25°C
3
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
GT20J321
500 Common
emitter
RL = 15
400 Tc = 25°C
VCE, VGE – QG
20
16
300
300
200
VCE = 100 V 200
100
12
8
4
00
0 20 40 60 80 100 120 140
Gate charge QG (nC)
40
Common
collector
VGE = 0
30
IF – VF
20
Tc = 125°C
25
10
40
0
0 0.5 1 1.5 2 2.5 3
Forward voltage VF (V)
100 Common collector
di/dt = 100 A/µs
VGE = 0
: Tc = 25°C
: Tc = 125°C
30
trr, Irr – IF
trr
10
Irr
3
1
0 5 10 15
Forward current IF (A)
1000
300
100
30
10
20
Safe Operating Area
100
IC max (pulse)*
30
IC max
(continuous)
50 µs*
10
DC
operation
100 µs*
3
*: Single pulse
1 Tc = 25°C
1 ms*
Curves must be
0.3 derated linearly
with increase in
10 ms*
temperature.
0.1
1 3 10 30 100 300 1000
Collector-emitter voltage VCE (V)
Reverse Bias SOA
100
30
10
3
1
0.3
Tj 125°C
VGE = 15 V
0.1 RG = 33
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
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