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STB50NE08
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE” POWER MOSFET
T Y PE
V DSS
RDS(on)
ID
ST B50NE08
80 V <0.024
50 A
s TYPICAL RDS(on) = 0.020
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
3
1
SALES OFFICE
D2PAK
DESCRIPTION
This Power MOSFET is the latest development of
TO-263
(suffix ”T4”)
SGS-THOMSON unique ”Single Feature Size
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
INTERNAL SCHEMATIC DIAGRAM
remarkable manufacturing reproducibility. DataSheet4U.com
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1998
Value
Uni t
80 V
80 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ ns
-65 to 175
oC
175 oC
(1) ISD 50 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
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STB50NE08
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THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/ W
oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
50
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
P a ra m et er
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc = 125
ON ()
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S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 25 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
80
Typ .
Max.
Unit
V
1 µA
10 µA
± 100 nA
Min.
2
Typ .
3
Max.
4
Unit
V
0.020 0.024 m
50 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ .
35
Max.
Unit
S
3850
480
105
5100
650
140
pF
pF
pF
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 40 V
ID = 25 A
RG =4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 64 V ID = 50 A VGS = 10 V
Min.
Typ .
37
95
85
19
28
Max.
50
130
110
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 64 V ID = 50 A
RG =4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
12
30
50
Max.
17
40
68
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 50 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 50 A
di/dt = 100 A/µs
VDD = 3D0 aVtaShTej e=t41U50.cooCm
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
50
200
Unit
A
A
1.5
100
V
ns
400 nC
8A
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Safe Operating Area
Thermal Impedance
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STB50NE08
Output Characteristics
Transfer Characteristics
Transconductance
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Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs
Temperature
STB50NE08
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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