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STP5NC70Z - STP5NC70ZFP
STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8- 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NC70Z/FP
www.DataSheet4U.cSoTmB5NC70Z/-1
700V
700V
<2
<2
4.6 A
4.6 A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)5NC70Z(-1) STP5NC70ZFP
700 V
700 V
± 25 V
4.6
4.6(*)
A
2.9
2.9(*)
A
18.4 18.4 A
100 35 W
0.8 0.32 W/°C
± 50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(q )ISD 4.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed
1/12

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D²PAK
I²PAK
1.25
62
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
w w w . D a t a S h e(puelse twid4th Ulimi.tedcbyoTj mmax)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
4.6
200
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
700
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.8
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.4 A
Min.
3
Typ.
4
1.8
Max.
5
2.0
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2.4A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
4
1200
98
9
Max.
Unit
S
pF
pF
pF
2/12

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 2.5 A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 560V, ID = 5A,
VGS = 10V
Qgd Gate-Drain Charge
www.DataSheet4US.cWomITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 560V, ID = 5 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
22
10
Max.
Unit
ns
ns
27 36.4 nC
8 nC
10 nC
Min.
Typ.
13
14
22
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 4.6 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs, VDD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
570
4.4
15.5
Max.
4.6
18.4
1.6
Unit
A
A
V
ns
µC
A
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT Voltage Thermal Coefficient
Rz Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 50 mA, VGS = 0
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/12

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1
Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP
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Thermal Impedance For TO-220/D²PAK/I²PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12

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Transconductance
STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12