D1266A.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 D1266A 데이타시트 다운로드

No Preview Available !

Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
www.DataSheCeto4lUle.cctoorm-base voltage
(Emitter open)
2SD1266 VCBO
2SD1266A
60
80
Collector-emitter voltage 2SD1266 VCEO
(Base open)
2SD1266A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VEBO
IC
ICP
PC
6
3
5
35
2.0
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1266 VCEO IC = 30 mA, IB = 0 60 V
(Base open)
2SD1266A
80
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
2SD1266
2SD1266A
VBE
ICES
Collector-emitter cutoff
current (Base open)
2SD1266 ICEO
2SD1266A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 3 A
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA
VCC = 50 V
1.8 V
200 µA
200
300 µA
300
1 mA
70 320
10
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250 160 to 320
Publication date: April 2003
SJD00283BED
1

No Preview Available !

2SD1266, 2SD1266A
50
40
(1)
30
PC Ta
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) With a 50 × 50 × 2 mm
Al heat sink
(4) Without heat sink
(PC = 2 W)
20
(2)
10
(3)
(4)
0
0 40 80 120 160
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
5
TC = 25°C
4
IB = 100 mA
90 mA
80mA
3
70 mA
60 mA
50 mA
40 mA
2 30 mA
20 mA
1
10 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
8
VCE = 4 V
25°C
6 TC = 100°C 25°C
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC/IB = 8
10
hFE IC
fT IC
104 104
VCE = 4 V
VCE = 5 V
f = 10 MHz
TC = 25˚C
103 103
TC = 100˚C
TC = 100˚C 25°C
25˚C
1 102 25°C
–25°C
102
0.1 10 10
0.01
0.01
0.1 1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitive pulse
TC = 25˚C
10
ICP
IC
1
t = 1ms
10 ms
DC
0.1
0.01
1
10 100 1000
Collector-emitter voltage VCE (V)
Rth t
103
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2 SJD00283BED

No Preview Available !

Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
www.DataSheet4U.cporomduct or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL