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DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1695 is a Darlington connection transistor and
incorporates a dumper diode between the collector and emitter and
a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
• Low collector saturation voltage
QUALITY GRADES
• Standard
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Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Collector (fin)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Ta = 25°C)
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
31 ±4
31 ±4
8.0
±2.0
±3.0
0.2
1.3
10
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
DataShee
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
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2SD1695
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Parameter
Symbol
Conditions
Collector to base voltage
VCBO IC = 1.0 mA, IE = 0
Collector to emitter voltage
VCEO
IC = 10 mA, RBE =
Collector cutoff current
ICBO VCB = 20 V, IE = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 1.0 A
Collector saturation voltage VCE(sat)* IC = 1.0 A, IB = 1.0 mA
Base saturation voltage
Turn-on time
Storage time
VBE(sat)*
ton
tstg
IC = 1.0 A, IB = 1.0 mA
IC = 1.0 A, IB1 = IB2 = 5.0 mA
RL = 20 , VCC 20 V
Fall time
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hFE2
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2,000 to 5,000
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MIN.
27
27
1,000
2,000
TYP.
31
31
MAX.
35
35
10
30,000
0.9 1.2
1.6 2.0
0.5
3.0
1.0
Unit
V
V
µA
V
V
µs
µs
µs
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The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4
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