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KSA1281
Audio Power Amplifier
• Collector Power Dissipation : PC=1W
• 3 Watt Output Application
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1 TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-50
-50
-5
-2
1
150
-55 ~ +150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VBE (sat)
VCE (sat)
Cob
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
IC= -100, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -50V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1.5A
IC= -1A, IB= -0.05mA
IC= -1A, IB= -0.05mA
VCB= -10V, IE=0, f=1MHz
VCE= -2V, IC= -500mA
Min.
-50
-50
-5
70
40
Typ.
40
100
Max.
-100
-100
240
Units
V
V
V
nA
nA
-1.2 V
-0.5 V
pF
MHz
hFE1 Classification
Classification
hFE1
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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Typical Characteristics
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-1400
-1200
-1000
-800
-600
-400
-200
0
0
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
-2 -4 -6 -8 -10 -12 -14 -16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1
IC = 50IB
Ta = 25oC
-0.1
-0.01
-1-1
--1100
--110000
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-10
IC(MAX)PLUS
IC(MAX)
-1 1ms
1s
Ta=25oC
D.C.
OPERATION
-0.1
-0.01
-0.1
VCEOMAX
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
-1
IC = 50IB
Ta = 25oC
-0.1
-0.01
-1-1
--1100
--110000
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
-1400
-1200
VCE = -2V
-1000
-800
-600
-400
-200
0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001

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Package Demensions
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TO-92L
4.90 ±0.20
0.70MAX.
0.80 ±0.10
1.00MAX.
0.50 ±0.10
1.27TYP
[1.27 ±0.20]
2.54 TYP
3.90 ±0.20
0.45 ±0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2001