A1281Y.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 A1281Y 데이타시트 다운로드

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KSA1281
Audio Power Amplifier
• Collector Power Dissipation : PC=1W
• 3 Watt Output Application
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1 TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-50
-50
-5
-2
1
150
-55 ~ +150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VBE (sat)
VCE (sat)
Cob
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
IC= -100, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -50V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1.5A
IC= -1A, IB= -0.05mA
IC= -1A, IB= -0.05mA
VCB= -10V, IE=0, f=1MHz
VCE= -2V, IC= -500mA
Min.
-50
-50
-5
70
40
Typ.
40
100
Max.
-100
-100
240
Units
V
V
V
nA
nA
-1.2 V
-0.5 V
pF
MHz
hFE1 Classification
Classification
hFE1
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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Typical Characteristics
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-1400
-1200
-1000
-800
-600
-400
-200
0
0
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
-2 -4 -6 -8 -10 -12 -14 -16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1
IC = 50IB
Ta = 25oC
-0.1
-0.01
-1-1
--1100
--110000
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-10
IC(MAX)PLUS
IC(MAX)
-1 1ms
1s
Ta=25oC
D.C.
OPERATION
-0.1
-0.01
-0.1
VCEOMAX
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
-1
IC = 50IB
Ta = 25oC
-0.1
-0.01
-1-1
--1100
--110000
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
-1400
-1200
VCE = -2V
-1000
-800
-600
-400
-200
0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001

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Package Demensions
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TO-92L
4.90 ±0.20
0.70MAX.
0.80 ±0.10
1.00MAX.
0.50 ±0.10
1.27TYP
[1.27 ±0.20]
2.54 TYP
3.90 ±0.20
0.45 ±0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2001

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3