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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11G1/D
GlobalOptoisolator
6-Pin DIP Optoisolators
Darlington Output (On-Chip Resistors)
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base–emitter resistors. The on–chip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA)
High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Interfacing and coupling systems of different potentials and impedances
Phase and Feedback Controls
General Purpose Switching Circuits
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
INPUT LED
Reverse Voltage
Forward Current — Continuous
Forward Current — Peak
Pulse Width = 300 µs, 2% Duty Cycle
VR
IF
IF
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
Value
6
60
3
120
1.41
Unit
Volts
mA
Amps
mW
mW/°C
OUTPUT DETECTOR
Collector–Emitter Voltage
H11G1
H11G2
H11G3
Emitter–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VEBO
IC
PD
100 Volts
80
55
7 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Junction Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
PD
TA
Tstg
TL
VISO
250
2.94
– 55 to +100
– 55 to +150
260
7500
mW
mW/°C
°C
°C
°C
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
H11G1*
[CTR = 1000% Min]
H11G2*
[CTR = 1000% Min]
H11G3
[CTR = 200% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
1
6
25
34
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
REV 1
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
1

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H11G1 H11G2 H11G3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
Reverse Leakage Current (VR = 3 V)
Forward Voltage IF = 10 mA)
Capacitance (V = 0 V, f = 1 MHz)
DARLINGTON OUTPUT (TA = 25°C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
H11G1
H11G2
H11G3
IR
VF
CJ
V(BR)CEO
100
80
55
Collector–Base Breakdown Voltage
(IC = 100 µA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CBO
100
80
55
Emitter–Base Breakdown Voltage (IE = 100 µA, IF = 0)
V(BR)EBO
7
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80°C)
(VCE = 60 V)
(VCE = 60 V, TA = 80°C)
(VCE = 30 V)
H11G1
H11G1
H11G2
H11G2
H11G3
ICEO
Capacitance (VCB = 10 V, f = 1 MHz)
CCB
COUPLED (TA = 25°C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
H11G1, 2
H11G1, 2
H11G3
IC (CTR)(2)
100 (1000)
5 (500)
2 (200)
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
H11G1, 2
H11G1, 2
H11G3
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
Isolation Resistance(3) (V = 500 Vdc)
VCE(sat)
VISO
7500
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
CIO —
SWITCHING (TA = 25°C)
Turn–On Time
Turn–Off Time
p(IF = 10 mA, VCC = 5 V, RL = 100 ,
Pulse Width 300 µs, f = 30 Hz)
ton —
toff —
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
Typ(1)
0.05
1.1
18
6
0.75
0.85
0.85
1011
2
5
100
Max Unit
10 µA
1.5 Volts
— pF
Volts
Volts
— Volts
100 nA
100 µA
100 nA
100 µA
100 nA
— pF
mA (%)
Volts
1
1
1.2
— Vac(pk)
— Ohms
— pF
µs
2 Motorola Optoelectronics Device Data

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TYPICAL CHARACTERISTICS
H11G1 H11G2 H11G3
100 100
IF = 50 mA
10
NORMALIZED TO:
10
NORMALIZED TO:
IF = 5 mA
1
VCE = 5 V
IF = 1 mA (300 µs PULSES)
TA = 25°C
IF = 1 mA (300 µs PULSES)
1 VCE = 5 V
0.1 IF = 1 mA
0.01
0.1 1 10 100 1000
IF, IRED INPUT CURRENT (mA)
Figure 1. Output Current versus Input Current
IF = 0.5 mA
0.1
–60 –40 –20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Output Current versus Temperature
100
10
1
0.1
0.01
0.2
IF = 50 mA
IF = 10 mA
IF = 2 mA
IF = 1 mA
2
PULSE ONLY
PULSE OR DC
1.8
1.6
IF = 0.5 mA
1.4
NORMALIZED TO:
TA = –55°C
TA = 25°C
IF = 1 mA (300 µs PULSES)
1.2
25°C
VCE = 5 V
1 100°C
1
10 20
1
10
100 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IF, LED FORWARD CURRENT (mA)
Figure 3. Output Current versus
Figure 4. LED Forward Characteristics
Collector–Emitter Voltage
100 k
10 k
1000
VCE = 80 V
VCE = 30 V
100
VCE = 10 V
10
1
0 10 20 30 40 50 60 70 80 90 100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Collector–Emitter Dark Current
versus Temperature
10
RL = 10
RL = 100
RL = 1 k
1
NORMALIZED TO:
0.1
0.1
IF = 10 mA
RL = 100 OHMS
VCC = 5 V
1
ton + toff, TOTAL SWITCHING SPEED (NORMALIZED)
Figure 6. Input Current versus Total
Switching Speed (Typical Values)
10
Motorola Optoelectronics Device Data
3