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6-PIN DIP
HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M
PACKAGE
H11N2-M
H11N3-M
SCHEMATIC
6
6
1
1
ANODE 1
CATHODE 2
3
6
1
DESCRIPTION
The H11NX-M series has a high speed integrated circuit detector optically
coupled to an AlGaAs infrared emitting diode. The output incorporates a
Schmitt trigger, which provides hysteresis for noise immunity and pulse s
haping. The detector circuit is optimized for simplicity of operation and utilizes
an open collector output for maximum application flexibility.
Truth Table
Input
Output
HL
LH
FEATURES
• High data rate, 5 MHz typical (NRZ)
• Free from latch up and oscilliation throughout voltage and temperature ranges.
• Microprocessor compatible drive
• Logic compatible output sinks 16 mA at 0.5 V maximum
• Guaranteed on/off threshold hysteresis
• Wide supply voltage capability, compatible with all popular logic systems
• High common mode transient immunity, 2000 V/µs minimum
• Fast switching tr = 7.5ns typical, tf = 12ns typical
• Underwriter Laboratory (UL) recognized—file #E90700
• VDE recognized – File#102497 – Add option V (e.g., H11N1VM)
APPLICATIONS
• Logic to logic isolator
• Programmable current level sensor
• Line receiver—eliminate noise and transient problems
• A.C. to TTL conversion—square wave shaping
• Interfaces computers with peripherals
• Isolated power MOS driver for power supplies
6 VCC
5 GND
4 VO
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/14/03

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6-PIN DIP
HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M
H11N2-M
H11N3-M
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C
Derate Above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
V45 Allowed Range
V65 Allowed Range
I4 Output Current
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
PD
VO
VCC
IO
Device
Value
Units
All -55 to +150
°C
All -40 to +85
°C
All 260 for 10 sec
°C
250 mW
All
2.94 mW/°C
All 30 mA
All 6
V
All 1.0
A
120 mW
All
1.41 mW/°C
150 mW
All
1.76 mW/°C
All 0 to 16
V
All 0 to 16
V
All 50 mA
ELECTRICAL CHARACTERISTICS (TA = 0-70°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol
EMITTER
Input Forward Voltage
Reverse Current
Capacitance
DETECTOR
Operating Voltage Range
Supply Current
Output Current, High
IF = 10 mA
IF = 0.3 mA
VR = 5 V
V = 0, f = 1.0 MHz
IF = 0, VCC = 5V
IF = 0.3mA, VCC = VO = 15V
VF
IR
CJ
VCC
ICC(off)
IOH
*Typical values at TA = 25°C
Device
All
All
All
All
All
All
Min
0.75
4
Typ*
1.4
1.25
6
Max Units
2
V
10 µA
100 pF
15 V
10 mA
100 µA
© 2003 Fairchild Semiconductor Corporation
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4/14/03

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6-PIN DIP
HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M
H11N2-M
H11N3-M
TRANSFER CHARACTERISTICS
DC Characteristics
Supply Current
Output Voltage, low
Turn-On Threshold Current
Turn-Off Threshold Current
Hysteresis Ratio
AC Characteristics
SWITCHING SPEED
Propagation delay time
High to Low
Rise Time
Propagation delay time
Low to High
Fall time
Data Rate
Test Conditions
Symbol Device
IF = 10mA, VCC = 5V
RL=270,VCC=5V, IF=IF(on) max.
RL=270, VCC = 5V
note 1
RL=270, VCC = 5V
RL=270, VCC = 5V
ICC(on)
VOL
IF(on)
IF(off)
IF(off)/IF(on)
All
All
H11N1-M
H11N2-M
H11N3-M
All
All
Test Conditions
Symbol Device
C=120pF, tP=1µs, RE: Note 2
Fig. 1
tPHL
All
C=120pF, tP=1µs, RE: Note 2
Fig. 1
tr
All
C=120pF, tP=1µs, RE: Note 2
Fig. 1
tPLH
All
C=120pF, tP=1µs, RE: Note 2
Fig. 1
tf
All
All
Min
0.8
2.3
4.1
0.3
0.65
Min
Typ*
6.5
Typ
100
7.5
150
12
5
Max
10
0.5
3.2
5
10
0.95
Max
Units
mA
V
mA
mA
Units
330 ns
ns
330 ns
ns
MHz
ISOLATION CHARACTERISTICS
Parameters
Test Conditions
Symbol
Min
Typ*
Max Units
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
*Typical values at TA = 25°C
f = 60 Hz, t =1 sec.
VI-O = 0V, f = 1 MHz
VI-O = ±500 VDC
VISO
CISO
RISO
7500
1011
0.4
VPEAK
0.6 pF
NOTES:
1. Maximum IF(ON) is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current would
require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is
recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
2. H11N1: RE = 910
H11N2: RE = 560
H11N3: RE = 240
© 2003 Fairchild Semiconductor Corporation
Page 3 of 9
4/14/03