K1170.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K1170 데이타시트 다운로드

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2SK1169, 2SK1170www.DataSheet4U.com
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source

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w2wSwK.Da1ta1S6h9ee,t42US.cKom1170
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1169
2SK1170
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
20
80
20
120
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1169 V(BR)DSS
2SK1170
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1169 IDSS
drain current
2SK1170
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1169 RDS(on)
on state resistance 2SK1170
2.0
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
±10
— 250
0.20
0.22
16
2800
780
90
32
115
200
90
1.0
3.0
0.25
0.27
500 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1169, 2SK1170
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *1
ID = 10 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
3

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w2wSwK.Da1ta1S6h9ee,t42US.cKom1170
Power vs. Temperature Derating
150
100
50
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V 7 V
6V
40
Pulse Test
30
20 5 V
10
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
30
10
3
1.0
10
OispliemraitetiodnbiDynCRtOhPDpiWSser(aa=otirn1oe)0nam(TsC1(=m11S02s0h5o°µCts))
µs
0.3 Ta = 25°C
2SK1170
2SK1169
0.1
1 3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
4 75°C
–25°C
TC = 25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4

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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
8 Pulse Test
6
20 A
4
10 A
2
ID = 5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
VGS = 10 V
Pulse Test
0.6
ID = 20 A
0.4
10 A
0.2 5 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1169, 2SK1170
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
0.5
VGS = 10 V
0.2 15 V
0.1
0.05
1
2 5 10 20 50 100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
20 Pulse Test
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
5