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Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio fT
SSS-Mini type package, allowing downsizing of the equipment and 
automatic insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
100
125
55 to +125
Unit
V
V
V
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
Marking Symbol : E
SSSMini3-F1 Package
Electrical Characteristics Ta = 25°C±3°C
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Parameter
Symbol
Conditions
Min Typ
Base-emitter voltage
VBE VCE = –10 V, IC = –1 mA
0.7
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Collector-emitter cut-off current (Base open)
ICEO VCE = –20 V, IB = 0
Emitter-base cut-off current (Collector open)
IEBO VEB = –5 V, IC = 0
Forward current transfer ratio
hFE VCB = –10 V, IE = 1 mA
70
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
0.1
Transition frequency
fT VCB = –10 V, IE = 1 mA, f = 200 MHz 150 300
Noise figure
NF VCB = –10 V, IE = 1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCB = –10 V, IE = 1 mA, f = 2 MHz
22
Common-emitter reverse transfer capacitance Cre VCB = –10 V, IE = 1 mA, f = 10.7 MHz
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
10
220
Unit
V
µA
µA
µA
V
MHz
dB
pF
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Publication date : December 2004
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2SA2164
120
2SA2164_ PC-Ta
PC Ta
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
2SA2164_ VCE(sat)-IC
VCE(sat) IC
10
IC / IB = 10
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1
0.1
Ta = 85°C
25°C
25°C
0.01
0.1
−1
−10 −100
Collector current IC (mA)
2SA2164_ IC-VCE
IC VCE
25
Ta = 25°C
IB = −300 µA
250 µA
20
200 µA
15 150 µA
100 µA
10
50 µA
5
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
2SA2164_ hFE-IC
hFE IC
160
VCE = −10 V
140 Ta = 85°C
120
25°C
100
25°C
80
60
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40
20
0
−0.1 −1 −10 −100
Collector current IC (mA)
2SA2164_ IC-VBE
IC VBE
30
VCE = −10 V
25
Ta = 85°C
20
25°C
15
25°C
10
5
0
0.3 0.4 0.5 − 0.6 − 0.7 − 0.8 − 0.9 −1
Base-emitter voltage VBE (V)
2SA2164_ Cob-VCB
Cob VCB
10 f = 1 MHz
Ta = 25°C
1
DataShee
0.1
0 5 10 15 20 25 30
Collector-base voltage VCB (V)
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
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modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
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permission of Matsushita Electric Industrial Co., Ltd.
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