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Power Transistors
2SA2140
Silicon PNP epitaxial planar type
For power amplification
For TV VM circuit
Features
Satisfactory linearity of forward current transfer ratio hFE
High transition frequency (fT)
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
180
V
180
V
6 V
1.5 A
3 A
20 W
2.0
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150 °C
55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
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C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
180
V
Collector-base cutoff current (Emitter open) ICBO VCB = −180 V, IE = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
100 µA
Forward current transfer ratio *
hFE VCE = 5 V, IC = 0.1 A
60 240
Collector-emitter saturation voltage
VCE(sat) IC = −1 A, IB = − 0.1 A
0.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.2 A, f = 10 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
30 pF
Turn-on time
Storage time
Fall time
ton IC = − 0.4 A, Resistance loaded
tstg IB1 = 0.04 A, IB2 = − 0.04 A
tf VCC = 100 V
0.1 µs
1.0 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
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60 to 140
120 to 240
Publication date: July 2004
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2SA2140
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
(1)
20
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
10
Non repetitive pulse, TC = 25°C
ICP
IC
1
0.1
0.01
1
t = 1 ms
t = 10 ms
t=1s
10 100 1 000
Collector-emitter voltage VCE (V)
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
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Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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