T0905.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 T0905 데이타시트 다운로드

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Features
35 dBm Output Power in CW Mode
High Power Added Efficiency (PAE)
Single Supply Operation (No Negative Rail)
Simple Analog Power Ramp Control
Low Current Consumption in Power-down Mode (Typically 15 µA)
Small SMD Package (PSSOP28 with Heat Slug)
Applications
Professional Phones
Hands-free Sets
ISM Band Application
Wireless Infrastructure Preamplifiers
Description
The T0905 is a monolithic integrated power amplifier IC manufactured with Atmel’s
Silicon-Germanium (SiGe) process. Due to its open architecture, the device can be
used either as a two or three-stage amplifier. Every stage can be matched individu-
ally, thus allowing applications in a wide frequency range. The T0905 can be used
from 135 MHz up to 600 MHz in both linear and non-linear (saturated) mode. The
power gain can be set dynamically by means of an analog control input optionally for
each single stage or for the entire power amplifier. Constant gain mode is also possi-
ble. The T0905 is suited for CW mode up to 35 dBm. These features, including wide
power ramp control, make the T0905 a very flexible power amplifier for many different
applications.
Apart from telephone applications, the T0905 can aDlsaotabSeheueste4dUf.ocromcar identification
systems and several other wireless communication systems. The single supply volt-
age operation at +3.5 V and a negligible leakage current in power-down mode enable
a remarkable simplification of the application’s power management.
Figure 1. Block Diagram
VCTL1 GAIN1 VCTL2 GAIN2 VCTL3 GAIN3
13
16 14
17 15
18
11
BGOUT
12
VCTL
10
VCC_CTL
BG
Buf1
Buf2
7
RFIN1
Match RF1 Match RF2
19
Buf3 VBIAS3
9
VBIAS2
8
VB2_DC
20
VB3_DC
22-25
Match
RF3
RFOUT/VCC3
21
GND3
65
4 3 28
GND1 VCC1 GND2 VCC2
RFIN2
27
VB3
26
GND3
General-
purpose
VHF/UHF Power
Amplifier
(135 to 600 MHz)
T0905
Preliminary
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Pin Configuration
Figure 2. Pinning PSSOP28
NC 1 28 VCC2
GND2 2 27 VB3
GND2 3 26 GND3
RFin2 4 25 RFOUT/VCC3
VCC1 5 24 RFOUT/VCC3
GND1 6 23 RFOUT/VCC3
RFIN1 7 22 RFOUT/VCC3
VB2_DC 8 21 GND3
VBIAS2 9 20 VB3_DC
VCC_CTL 10 19 VBIAS3
BGOUT 11 18 GAIN3
VCTL 12 17 GAIN2
VCTL1 13 16 GAIN1
VCTL2 14 15 VCTL3
Pin Description
Pin
1
2
3
et4U.com 4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
NC
GND2
GND2
RFIN2
VCC1
GND1
RFIN1
VB2_DC
VBIAS2
VCC_CTL
BGOUT
VCTL
VCTL1
VCTL2
VCTL3
GAIN1
GAIN2
GAIN3
VBIAS3
VB3_DC
GND3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
Function
Not connected
Ground
Ground
RF input (2-stage operaDtioanta) Sheet4U.com
Supply voltage, first stage
Ground
RF input (3-stage operation)
Input for gain setting, second stage
Output Buf2
Supply voltage control block
Output band gap
Control voltage input
Control voltage input, first stage
Control voltage input, second stage
Control voltage input, third stage
Gain setting Buf1
Gain setting Buf2
Gain setting Buf3
Output Buf3
Input for gain setting, third stage
Ground
RF output/supply voltage, third stage
RF output/supply voltage, third stage
RF output/supply voltage, third stage
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2 T0905 [Preliminary]
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Pin Description (Continued)
Pin
Symbol
Function
25 RFOUT/VCC3 RF output/supply voltage, third stage
26
GND3
Ground
27 VB3 Pin to extend the input capacity of stage 3
28
VCC2
Supply voltage second stage
T0905 [Preliminary]
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Supply voltage VCC, no RF
VCC1, VCC2, VCC3
Input power
Gain control voltage(1)
PRFin
Vctl
Operating case temperature
Tc
Storage temperature
Tstg
Maximum output power
PRFout
Note: 1. The part may not survive all maximums applied simultaneously
0 to +5.5
10
0 to +2.5
-40 to 100
-40 to +150
36
V
dBm
V
°C
°C
dBm
et4U.coTmhermal Resistance
Parameters
Junction case
Operating Range
All voltages are referred to GND
Parameters
Supply voltage
Ambient temperature
Input frequency
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Symbol
RthJC
Value
19
Symbol
VCC
Tamb
fRfin
Value
2.7 to 5.0
-40 to +85
135 to 600
DataShee
Unit
K/W
Unit
V
°C
MHz
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