K1317.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 K1317 데이타시트 다운로드

No Preview Available !

2SK1317
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
High breakdown voltage VDSS = 1500 V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1
2
3 1. Gate
2. Drain
(Flange)
S
3. Source

No Preview Available !

2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
www.DataSheet4U2..coVmalue at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
1500
±20
2.5
7
2.5
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 1500
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
0.45
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
9
0.75
990
125
60
17
70
110
60
0.9
1750
Max
±1
500
4.0
12
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 15 V *1
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 2 A, VGS = 10 V,
RL = 15
IF = 2 A, VGS = 0
IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
2

No Preview Available !

Power vs. Temperature Derating
120
80
40
0 50 100
www.DataSheet4U.com Case Temperature TC (°C)
150
Typical Output Characteristics
5
15 V
10 V
Pulse Test
4
8V
7V
3
6V
2
5V
1
VGS = 4 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
2SK1317
10
3
1.0
0.3
0.1
0.03
Maximum Safe Operation Area
DC OPpWer=at1io0nm(TsC1(m1=1sS205h0°o1µCt0)s)µs
Operation in this area
is limited by RDS (on)
Ta = 25°C
0.01
10 30 100 300 1,000 3,000 10,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
2.0
1.6
VDS = 20 V
Pulse Test
1.2
0.8 75°C
TC = 25°C
0.4 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
3

No Preview Available !

2SK1317
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
ID = 3 A
30
20 2 A
1A
10
0.5 A
www.DataSheet4U0.com 4
8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
16
VGS = 15 V
Pulse Test
ID = 2 A
0.5 A, 1 A
12
8
4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
VGS = 10 V
15 V
10
5
2
Pulse Test
1.0
0.5
0.1
0.2 0.5 1.0 2
Drain Current ID (A)
5
10
Forward Transfer Admittance
vs. Drain Current
10
VDS = 20 V
5 Pulse Test
2 –25°C
Ta = 25°C
1.0 75°C
0.5
0.2
0.1
0.05 0.1 0.2
0.5 1.0 2
Drain Current ID (A)
5
4

No Preview Available !

5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
500
200 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
100 Pulse Test
50
www.DataSheet4U.c0o.m05 0.1 0.2 0.5 1.0 2
Reverse Drain Current IDR (A)
5
1,000
800
600
400
200
0
Dynamic Input Characteristics
20
VDD = 250V
400 V
600 V
VDS
VGS
16
12
8
VDD = 600 V
400 V
250 V
ID = 2.5 A
4
20 40 60 80
Gate Charge Qg (nc)
0
100
10,000
1,000
2SK1317
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100 Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
500
Switching Characteristics
VGS = 10 V
VDD
=
30
V
PW = 2µs, duty < 1%
td (off)
200
100
tf
50
tr
20 td (on)
10
0.05
0.1 0.2 0.5 1.0 2
Drain Current ID (A)
5
5