Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
www.DataSheePt4Ua.rcaommeter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
- 3.3
- 4.1
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=3.2A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=135µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=30V, VDS=0V
VGS=10V, ID=2A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
Values
typ.
-
700
3
0.5
-
-
1.26
3.8
10
max.
-
-
3.9
1
70
100
1.4
-
-
Unit
V
µA
nA
Ω
Page 2
2003-10-02