03N60C3.pdf 데이터시트 (총 14 페이지) - 파일 다운로드 03N60C3 데이타시트 다운로드

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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
1.4
3.2
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
www.DataShee•t4UE.cxotmreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP03N60C3
SPB03N60C3
SPA03N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4401
P-TO263-3-2 Q67040-S4391
P-TO220-3-31 -
Marking
03N60C3
03N60C3
03N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.4A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
3.2 3.21)
2 21)
9.6 9.6
100 100
0.2 0.2
3.2 3.2
±20 ±20
±30 ±30
38 29.7
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02

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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
www.DataSheePt4Ua.rcaommeter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
- 3.3
- 4.1
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=3.2A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=135µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=30V, VDS=0V
VGS=10V, ID=2A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
Values
typ.
-
700
3
0.5
-
-
1.26
3.8
10
max.
-
-
3.9
1
70
100
1.4
-
-
Unit
V
µA
nA
Ω
Page 2
2003-10-02

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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
www.DataSheeIt4nUp.cuotmcapacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,5) Co(er)
energy related
Effective output capacitance,6) Co(tr)
time related
VDS≥2*ID*RDS(on)max,
ID=2A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=350V, VGS=0/10V,
ID=3.2A,
RG=20Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=420V, ID=3.2A
Qgd
Qg VDD=420V, ID=3.2A,
VGS=0 to 10V
V(plateau) VDD=420V, ID=3.2A
min.
-
Values
typ. max.
3.4 -
Unit
S
- 400 - pF
- 150 -
-5-
- 12 -
- 26 -
- 7 - ns
-3-
- 64 100
- 12 20
- 2 - nC
-6-
- 13 17
- 5.5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2003-10-02

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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
www.DataSheeItn4Uv.ecormse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS TC=25°C
ISM
VSD
trr
Qrr
I rrm
dirr/dt
VGS=0V, IF=IS
VR=420V, IF=IS ,
diF/dt=100A/µs
Tj=25°C
min.
-
Values
typ. max.
- 3.2
Unit
A
- - 9.6
- 1 1.2 V
- 250 400 ns
- 1.8 - µC
- 15 - A
- - - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_B
SPA
Rth1
Rth2
Rth3
Rth4
Rth5
Rth6
0.054
0.103
0.178
0.757
0.682
0.202
0.054
0.103
0.178
0.356
0.655
2.535
K/W
Cth1
Cth2
Cth3
Cth4
Cth5
Cth6
Value
Unit
SPP_B
SPA
0.00005232 0.00005232 Ws/K
0.0002034 0.0002034
0.0002963 0.0002963
0.0009103 0.0009103
0.002084 0.004434
0.024
0.412
Ptot (t)
Tj R th1
C th 1
C th 2
R th ,n
Tcase External Heatsink
C th ,n
Tamb
Page 4
2003-10-02

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1 Power dissipation
Ptot = f (TC)
Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
2 Power dissipation FullPAK
Ptot = f (TC)
40 SPP03N60C3
W
www.DataSheet4U.com32
28
24
20
16
12
8
4
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 1
A
W30
24
22
20
18
16
14
12
10
8
6
4
2
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 1
A
10 0
10 0
10 -1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
VDS
Page 5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 1 10 2 V 10 3
VDS
2003-10-02