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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA562 TRANSISTOR (PNP)
FEATURE
Power dissipation
PCM : 0.5 W (Tamb=25)
Collector current
ICM : -0.5 A
Collector-base voltage
V (BR) CBO: -35 V
Operating and storage junction temperature range
Tstg: -55to +150
TJ : 150
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (TambD=a2t5aSheeut4nUle.csosm otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA , IE=0
-35
Collector-emitter breakdown voltage V(BR)CEO
IC= -1mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-5
Collector cut-off current
ICBO VCB=-35V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
DC current gain
hFE
VCE=-1 V, IC=-100mA
70
Collector-emitter saturation voltage
VCE(sat)
IC= -100mA, IB= -10 mA
Base-emitter voltage
Transition frequency
VBE(on)
fT
VCE=- 1V, IC=-100 mA
VCE= -6 V, IC= -20mA
F=30MHz
200
MAX
-0.1
-0.1
240
-0.25
-1
UNIT
DataShee
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
DataSheet4U.com
hFE(1)
O
70-140
Y
120-240
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