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Q-FLASHTM MEMORY
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
MT28F128J3, MT28F640J3,
MT28F320J3
FEATURES
• x8/x16 organization
• One hundred twenty-eight 128KB erase blocks
(128Mb)
Sixty-four 128KB erase blocks (64Mb)
Thirty-two 128KB erase blocks (32Mb)
• VCC, VCCQ, and VPEN voltages:
2.7V to 3.6V VCC operation
2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation
2.7V to 3.6V, or 5V VPEN application programming
• Interface Asynchronous Page Mode Reads:
150ns/25ns read access time (128Mb)
120ns/25ns read access time (64Mb)
110ns/25ns read access time (32Mb)
• Enhanced data protection feature with VPEN = VSS
Flexible sector locking
Sector erase/program lockout during power
transition
• Security OTP block feature
Permanent block locking (Contact factory foDr ataSheet4U.com
availability)
• Industry-standard pinout
• Inputs and outputs are fully TTL-compatible
• Common Flash Interface (CFI) and Scalable
Command Set
• Automatic write and erase algorithm
• 4.7µs-per-byte effective programming time using
write buffer
• 128-bit protection register
64-bit unique device identifier
64-bit user-programmable OTP cells
• 100,000 ERASE cycles per block
• Automatic suspend options:
Block Erase Suspend-to-Read
Block Erase Suspend-to-Program
Program Suspend-to-Read
56-Pin TSOP Type I
64-Ball FBGA
NOTE: MT28F128J3, and MT28F320J3 are preliminary status.
MT28F640J3 is production status.
OPTIONS
MARKING
• Timing
150ns (128Mb)
-15
120ns (64Mb)
-12
110ns (32Mb)
-11
• Operating Temperature Range
Commercial Temperature (0ºC to +85ºC) None
Extended Temperature (-40ºC to +85ºC)
ET
• VCCQ Option*
2.7V–3.6V
4.5V–5.5V
• Packages
56-pin TSOP Type I
64-ball FBGA (1.0mm pitch)
None
F
RG
FS
Part Number Example:
MT28F640J3RG-12 ET
*Contact factory for availability of the MT28F320J3 and
MT28F640J3.
DataShee
DataSheet4U.com128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
1
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTION DATA SHEET SPECIFICATIONS.
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128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
GENERAL DESCRIPTION
The MT28F128J3 is a nonvolatile, electrically block-
can provide data protection when connected to ground.
erasable (Flash), programmable memory containing
This pin also enables program or erase lockout during
134,217,728 bits organized as 16,777,218 bytes (8 bits)
power transition.
or 8,388,608 words (16 bits). This 128Mb device is orga-
Micron’s even-sectored Q-Flash devices offer indi-
nized as one hundred twenty-eight 128KB erase blocks.
vidual block locking that can lock and unlock a block
The MT28F640J3 contains 67,108,864 bits organized
using the sector lock bits command sequence.
as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits).
Status (STS) is a logic signal output that gives an
This 64Mb device is organized as sixty-four 128KB erase
additional indicator of the internal state machine (ISM)
blocks.
activity by providing a hardware signal of both status
Similarly, the MT28F320J3 contains 33,554,432 bits
and status masking. This status indicator minimizes
organized as 4,194,304 bytes (8 bits) or 2,097,152 words
central processing unit (CPU) overhead and system
(16 bits). This 32Mb device is organized as thirty-two
power consumption. In the default mode, STS acts as
128KB erase blocks.
an RY/BY# pin. When LOW, STS indicates that the ISM
These three devices feature in-system block lock-
is performing a block erase, program, or lock bit con-
ing. They also have common flash interface (CFI) that
figuration. When HIGH, STS indicates that the ISM is
permits software algorithms to be used for entire fami-
ready for a new command.
lies of devices. The software is device-independent,
Three chip enable (CE) pins are used for enabling and
JEDEC ID-independent with forward and backward
disabling the device by activating the device’s control
compatibility.
logic, input buffer, decoders, and sense amplifiers.
Additionally, the scalable command set (SCS) al-
BYTE# enables selecting x8 or x16 READs/WRITEs
lows a single, simple software driver in all host systems
to the device. BYTE# at logic LOW selects an 8-bit mode
to work with all SCS-compliant Flash memory devices.
et4U.com The SCS provides the fastest system/device data trans-
with address A0 selecting between the low byte
and the high byte. BYTE# at logic HIGH enables 16-bit DataShee
fer rates and minimizes the device and system-level
operation.
implementation costs.
DataSheet4U.coRmP# is used to reset the device. When the device is
To optimize the processor-memory interface, the
device accommodates VPEN, which is switchable during
disabled and RP# is at VCC, the standby mode is en-
abled. A reset time (tRWH) is required after RP#
block erase, program, or lock bit configuration, or
hardwired to VCC, depending on the application. VPEN is
switches HIGH until outputs are valid. Likewise, the
device has a wake time (tRS) from RP# HIGH until
treated as an input pin to enable erasing, program-
WRITEs to the command user interface (CUI) are rec-
ming, and block locking. When VPEN is lower than the
ognized. When RP# is at GND, it provides write protec-
VCC lockout voltage (VLKO), all program functions are
tion, resets the ISM, and clears the status register.
disabled. Block erase suspend mode enables the user
A variant of the MT28F320J3 also supports the new
to stop block erase to read data from or program data to
security block lock feature for additional code security.
any other blocks. Similarly, program suspend mode
This feature provides an OTP function for locking the
enables the user to suspend programming to read data
top two blocks, the bottom two blocks, or the entire
or execute code from any unsuspended blocks.
device. (Contact factory for availability.)
VPEN serves as an input with 2.7V, 3.3V, or 5V for
application programming. VPEN in this Q-Flashfamily
DataSheet4U.com
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
DataSheet4 U .com
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
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DEVICE MARKING
Due to the size of the package, Micron’s standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to Micron part num-
bers in Table 1.
Table 1
Cross Reference for Abbreviated Device Marks
PART NUMBER
MT28F320J3FS-11
MT28F320J3FS-11 ET
MT28F640J3FS-12
MT28F640J3FS-12 ET
MT28F128J3FS-15
MT28F128J3FS-15 ET
PRODUCT
MARKING
FW201
FW207
FW202
FW209
FW203
FW501
ENGINEERING
SAMPLE
FX201
FX207
FX202
FX209
FX203
FX501
QUALIFIED
SAMPLE
FQ201
FQ207
FQ202
FQ209
FQ203
FQ501
et4U.com
PIN /BALL ASSIGNMENT (Top View)
56-Pin TSOP Type I
DataSheet4U.com
64-Ball FBGA
A22 1
CE1 2
A21 3
A20 4
A19 5
A18 6
A17 7
A16 8
VCC 9
A15 10
A14 11
A13 12
A12 13
CE0 14
VPEN
15
RP# 16
A11 17
A10 18
A9 19
A8 20
VSS 21
A7 22
A6 23
A5 24
A4 25
A3 26
A2 27
A1 28
56 NC
55 WE#
54 OE#
53 STS
52 DQ15
51 DQ7
50 DQ14
49 DQ6
48 VSS
47 DQ13
46 DQ5
45 DQ12
44 DQ4
43 VCCQ
42 VSS
41 DQ11
40 DQ3
39 DQ10
38 DQ2
37 VCC
36 DQ9
35 DQ1
34 DQ8
33 DQ0
32 A0
31 BYTE#
30 A23
29 CE2
12345678
A
A1
A6
A8
VPEN
A13
VCC
A18 A22
B A2 VSS A9 CE0 A14 DNU A19 CE1
C A3 A7 A10 A12 A15 DNU A20 A21
D A4 A5 A11 RP# DNU DNU A16 A17
E DQ8 DQ1 DQ9 DQ3 DQ4 DNU DQ15 STS
F BYTE# DQ0 DQ10 DQ11 DQ12 DNU DNU OE#
G A23 A0 DQ2 VCCQ DQ5 DQ6 DQ14 WE#
H
CE2 DNU VCC
VSS DQ13 VSS
DQ7
NC
Top View
(Ball Down)
DataShee
NOTE: 1. A22 only exists on the 64Mb and 128Mb devices. On the 32Mb, this pin/ball is a no connect (NC).
2. A23 only exists on the 128Mb device. On the 32Mb and 64Mb, this pin/ball is a no connect (NC).
3. The # symbol indicates signal is active LOW.
DataSheet4U.com
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
3 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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A0–A23
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CE0
CE1
CE2
OE#
WE#
RP#
VCC
STS
VPEN
CE Logic
A0–A22
CE0
CE1
CE2
OE#
WE#
RP#
VCC
STS
VPEN
CE Logic
DataSheet4U.com
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
DataSheet4 U .com
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
(128Mb)
I/O
Control
Logic
Addr.
Buffer/
Latch
Input
Buffer
128KB Memory Block (0)
128KB Memory Block (1)
128KB Memory Block (2)
Power
(Current)
Control
Addr.
Counter
Command
Execution
Logic
State
Machine
VPP
Switch/
Pump
Write
Buffer
Y-
Decoder
128KB Memory Block (125)
128KB Memory Block (126)
128KB Memory Block (127)
Y - Select Gates
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
Status
Register
Identification
Register
DataSheet4U.com
Query
FUNCTIONAL BLOCK DIAGRAM
(64Mb)
Output
Buffer
DQ0–DQ15
DataShee
I/O
Control
Logic
Addr.
Buffer/
Latch
Input
Buffer
128KB Memory Block (0)
128KB Memory Block (1)
128KB Memory Block (2)
Power
(Current)
Control
Addr.
Counter
Command
Execution
Logic
State
Machine
VPP
Switch/
Pump
Write
Buffer
Y-
Decoder
128KB Memory Block (61)
128KB Memory Block (62)
128KB Memory Block (63)
Y - Select Gates
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
DQ0–DQ15
Status
Register
Identification
Register
Query
Output
Buffer
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A0–A21
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CE0
CE1
CE2
OE#
WE#
RP#
VCC
STS
VPEN
CE Logic
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
(32Mb)
I/O
Control
Logic
Addr.
Buffer/
Latch
Input
Buffer
128KB Memory Block (0)
128KB Memory Block (1)
128KB Memory Block (2)
Power
(Current)
Control
Addr.
Counter
Command
Execution
Logic
State
Machine
VPP
Switch/
Pump
Write
Buffer
Y-
Decoder
128KB Memory Block (29)
128KB Memory Block (30)
128KB Memory Block (31)
Y - Select Gates
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
Status
Register
Identification
Register
DataSheet4U.com
Query
Output
Buffer
DQ0–DQ15
DataShee
DataSheet4U.com
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
DataSheet4 U .com
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.