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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160C3
Low Voltage, Extended Temperature
FEATURES
• Thirty-nine erase blocks:
Eight 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
BALL ASSIGNMENT (Top View)
46-Ball FBGA
• VCC, VCCQ and VPP voltages:
2.7V–3.3V VCC
2.7V–3.3V VCCQ*
1.65V–3.3V and 12V VPP
• Address access times:
90ns, 110ns at 2.7V–3.3V
12345678
A
A13 A11
A8
VPP WP# A19
A7
A4
B
A14 A10 WE# RP# A18 A17
A5
A2
• Low power consumption:
C A15 A12 A9
A6 A3 A1
Standby and deep power-down mode < 1µA
(typical ICC)
Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0
E
VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
F VSS DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE#
• Software/hardware block protection
OPTIONS
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NUMBER
(Ball Down)
• Timing
90ns access
NOTE: See page 3 for Ball Description Table.
-9 See last page for mechanical drawing.
110ns access
-11
DataShee
• Boot Block Starting Address
Top (FFFFFH)
Bottom (00000H)
• Package
46-ball FBGA (6 x 8 ball grid)
• Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
*Lower VCCQ ranges are available upon request.
Part Number Example:
MT28F160C3FD-11 TET
T
B
FD
None
ET
GENERAL DESCRIPTION
The MT28F160C3 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 16,777,216 bits organized as 1,048,576 words (16
bits).
The MT28F160C3 is manufactured on 0.22µm pro-
cess technology in a 48-ball FBGA package. The device
has an I/O supply of 2.7V (MIN). Programming in pro-
duction is accomplished by using high voltage which can
be supplied on a separate line.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
WSM status can be monitored by an on-chip status reg-
ister to determine the progress of program/erase tasks.
The device is equipped with 128 bits of one time
programmable (OTP) area. The soft protection feature
for blocks will mark them as read-only by configuring soft
protection registers with command sequences.
Please refer to Micron’s Web site (www.micron.com/
flash) for the latest data sheet.
DEVICE MARKING
Due to the size of the package, Micron’s standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device marks
are cross referenced to Micron part numbers in Table 1.
DataSheet4U.com1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
ARCHITECTURE
The MT28F160C3 flash contains eight 4K-word
parameter blocks and thirty-one 32K-word blocks.
Memory is organized by using a blocked architecture to
allow independent erasure of selected memory blocks.
Any address within a block address range selects that
block for the required READ, WRITE, or ERASE operation
(see Figures 1 and 2).
Table 1
Cross Reference for Abbreviated
Device Marks1
PART NUMBER
MT28F160C3FD-9 BET
MT28F160C3FD-9 TET
MT28F160C3FD-11 BET
MT28F160C3FD-11 TET
PRODUCT
MARKING
FW610
FW611
FW612
FW613
SAMPLE
MARKING
FX610
FX611
FX612
FX613
NOTE: 1. The mechanical sample marking is FY610.
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RP#
CE#
WE#
OE#
A0–A19
DQ0–DQ15
Data Input
Buffer
CSM
FUNCTIONAL BLOCK DIAGRAM
Data
Register
X DEC
Y/Z DEC
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Bank a Blocks
Y/Z Gating/Sensing
ID
Reg.
Status
Reg.
DataShee
WSM
I/O Logic
Program/
Erase Change
Pump Voltage
Switch
Address
Input
Buffer
APS
Control
Address
CNT WSM
Address Latch
Address
Multiplexer
Output
Multiplexer
Data
Comparator
DQ0–DQ15
Output
Buffer
Y/Z DEC
X DEC
Y/Z Gating/Sensing
Bank b Blocks
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1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
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2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.

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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
BALL DESCRIPTIONS
46-BALL FBGA
NUMBERS SYMBOL
3B WE#
TYPE
Input
5A
WP#
Input
7D CE# Input
4B RP# Input
8F OE# Input
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1A, 1B, 1C, 1D,
2A, 2B, 2C, 3A,
3C, 5B, 6A, 6B,
6C, 7A, 7B, 7C,
8A, 8B, 8C, 8D
A0-A19
2D, 2E, 2F, 3D,
3E, 3F, 4D, 4E,
4F, 5D, 5E, 6D,
6E, 6F, 7E, 7F
DQ0-DQ15
4A VPP
Input
Input/
Output
Supply
5F
1E
1F, 8E
VCC
VCCQ
VSS
Supply
Supply
Supply
DESCRIPTION
Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is
LOW, the cycle is either a WRITE to the command state machine (CSM)
or to the memory array.
Write Protect: Unlocks the soft-protected blocks when HIGH if VPP =
1.65V–3.3V or 12V and RP# = VIH for WRITE or ERASE. Does not affect
WRITE or ERASE operation on other blocks.
Chip Enable: Activates the device when LOW. When CE# is HIGH, the
device is disabled and goes into standby power mode.
Reset/Power-Down: When LOW, RP# clears the status register, sets the
write state machine (WSM) to the array read mode and places the
device in deep power-down mode. All inputs, including CE#, are “Don’t
Care,” and all outputs are High-Z. RP# must be held at VIH during all
other modes of operation.
Output Enable: Enables data output buffers when LOW. When OE# is
HIGH, the output buffers are disabled.
Address Inputs: These address inputs select a unique, 16-bit word out
of the 1,048,576 available.
DataShee
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Data I/O: These data I/O are data output lines during any READ
operation or data input lines during a WRITE. Data I/O are used to
input commands to the CSM.
Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until
completion of the operation, VPP must be 1.65V–3.3V or 12V. VPP =
“Don’t Care” during all other operations.
Power Supply: 2.7V–3.3V.
I/O Supply Voltage: 2.7V–3.3V.
Ground.
DataSheet4U.com
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
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3 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.

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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
TRUTH TABLE1
FUNCTION
RP# CE# OE# WE# WP# VPP
Standby
HHXXXX
RESET
LXXXXX
READING
READ
HL LHXX
Output Disable
H L HHXX
WRITE/ERASE (EXCEPT SOFT PROTECTED BLOCKS)2
ERASE SETUP
H L H L XX
ERASE CONFIRM3
H L H L X VPPH
WRITE SETUP
H L H L XX
WRITE4
READ ARRAY5
H L H L X VPPH
H L H L XX
WRITE/ERASE (SOFT-PROTECTED BLOCKS)2
ERASE SETUP
H L H L XX
ERASE CONFIRM3
H L H L H VPPH
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WRITE SETUP
WRITE4
READ ARRAY5
DEVICE IDENTIFICATION6
H L H L XX
H L H L H VPPH
H L H L XX
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Manufacturer
HL LHXX
Device (top boot)
HL LHXX
Device (bottom boot)
HL LHXX
A0 DQ0-DQ7 DQ8-DQ15
X High-Z High-Z
X High-Z High-Z
X Data-Out Data-Out
X High-Z High-Z
X 20H
X
X D0H
X
X 10H/40H
X
X Data-In Data-In
X FFH
X
X 20H
X
X D0H
X
X 10H/40H
X
X Data-In Data-In DataShee
X FFH
X
L 2CH
H 92H
H 93H
00H
44H
44H
NOTE: 1. L = VIL (LOW), H = VIH (HIGH), X = VIL or VIH (“Don’t Care”).
2. VPPH1 = 1.65V–3.3V and VPPH2 = 12V.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. See Table 3 for the IDENTIFY DEVICE command.
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1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
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4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
Figure 1
Top Boot Block Memory Address Map
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ADDRESS RANGE
FFFFFh
F8000h
F7FFFh
F0000h
EFFFFh
E8000h
E7FFFh
E0000h
DFFFFh
D8000h
D7FFFh
D0000h
CFFFFh
C8000h
C7FFFh
C0000h
BFFFFh
B8000h
B7FFFh
B0000h
AFFFFh
A8000h
A7FFFh
A0000h
9FFFFh
98000h
97FFFh
90000h
8FFFFh
88000h
87FFFh
80000h
7FFFFh
78000h
77FFFh
70000h
6FFFFh
68000h
67FFFh
60000h
5FFFFh
58000h
57FFFh
50000h
4FFFFh
48000h
47FFFh
40000h
3FFFFh
38000h
37FFFh
30000h
2FFFFh
28000h
27FFFh
20000h
1FFFFh
18000h
17FFFh
10000h
0FFFFh
08000h
07FFFh
00000h
8 x 4K-Word Blocks
32K-Word Block
32K-Word Block
0
1
2
Parameter
Blocks
32K-Word Block 3
32K-Word Block 4
32K-Word Block 5
32K-Word Block 6
32K-Word Block 7
32K-Word Block 8
32K-Word Block 9
32K-Word Block 10
32K-Word Block 11
32K-Word Block 12
32K-Word BlocDkataS13heet4U.com
32K-Word Block 14
32K-Word Block 15
32K-Word Block 16
32K-Word Block 17
32K-Word Block 18
32K-Word Block 19
32K-Word Block 20
32K-Word Block 21
32K-Word Block 22
32K-Word Block 23
32K-Word Block 24
32K-Word Block 25
32K-Word Block 26
32K-Word Block 27
32K-Word Block 28
32K-Word Block 29
32K-Word Block 30
32K-Word Block 31
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
FFFFFh
FF000h
FEFFFh
FE000h
FDFFFh
FD000h
FCFFFh
FC000h
FBFFFh
FB000h
FAFFFh
FA000h
F9FFFh
F9000h
F8FFFh
F8000h
DataShee
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
DataSheet4 U .com