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NTJD4105C
Small Signal MOSFET
20 V / −8.0 V, Complementary,
+0.63 A / −0.775 A, SC−88
Features
Complementary N and P Channel Device
Leading −8.0 V Trench for Low RDS(on) Performance
ESD Protected Gate − ESD Rating: Class 1
SC−88 Package for Small Footprint (2 x 2 mm)
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
Applications
DC−DC Conversion
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
N−Ch
P−Ch
Gate−to−Source Voltage
N−Ch
P−Ch
Continuous Drain Current
− Steady State
(Based on RqJA)
Continuous Drain Current
− Steady State
(Based on RqJL)
Pulsed Drain Current
N−Ch
P−Ch
N−Ch
P−Ch
TA=25°C
TA=85°C
TA=25°C
TA=85°C
TA=25°C
TA=85°C
TA=25°C
TA=85°C
tp10 ms
Power Dissipation − Steady State
(Based on RqJA)
TA=25°C
TA=85°C
Power Dissipation − Steady State
(Based on RqJL)
TA=25°C
TA=85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
N−Ch
P−Ch
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS (Note 1)
VDSS
VGS
ID
IDM
PD
TJ,
TSTG
IS
TL
20
−8.0
±12
±8.0
0.63
0.46
−0.775
−0.558
0.91
0.65
−1.1
−0.8
±1.2
0.27
0.14
0.55
0.29
−55 to
150
0.63
−0.775
260
V
V
A
A
W
°C
A
°C
Junction−to−Ambient
– Steady State
Junction−to−Lead (Drain)
– Steady State
Typ
RqJA
400 °C/W
Max 460
Typ
RqJL
194
Max 226
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
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V(BR)DSS
N−Ch 20 V
P−Ch −8.0 V
RDS(on) TYP
0.29 W @ 4.5 V
0.36 W @ 2.5 V
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
ID MAX
0.63 A
−0.775 A
SOT−363
SC−88 (6−LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
6
1
SC−88 (SOT−363)
CASE 419B
Style 26
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source−1
6
Drain−1
Gate−1
Gate−2
Drain−2
Source−2
Top View
TC = Specific Device Code
D = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 1
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Publication Order Number:
NTJD4105C/D

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NTJD4105C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Condition
OFF CHARACTERISTICS
Drain−to−Source
Breakdown Voltage
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS
V(BR)DSS
/ TJ
N
P
N
P
VGS=0 V
ID=250 mA
ID=−250 mA
Zero Gate Voltage Drain Current
Gate−to−Source
Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
N
P
VGS=0 V, VDS=16 V
VGS=0 V, VDS=−6.4 V
TJ=25 °C
N
P
VDS=0 V
VGS=±12 V
VGS=±8.0
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH) /
TJ
N
P
N
P
VGS=VDS
ID=250 mA
ID=−250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
N
P
N
P
P
N
P
VGS=4.5 V ID=0.63 A
VGS=−4.5 V, ID=−0.57 A
VGS=2.5 V, ID=0.40 A
VGS=−2.5 V, ID=−0.48 A
VGS=−1.8 V, ID=−0.20 A
VDS=4.0 V ID=0.63 A
VDS=−4.0 V, ID=−0.57 A
Input Capacitance
CISS
N
VDS=20 V
P VDS=−8.0V
Output Capacitance
COSS
N
P
f=1 MHz, VGS=0 V
VDS=20 V
VDS=−8.0 V
Reverse Transfer Capacitance
CRSS
N
VDS=20 V
P VDS=−8.0 V
Total Gate Charge
QG(TOT) N
VGS=4.5 V, VDS=10 V, ID=0.7 A
P VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
Threshold Gate Charge
QG(TH)
N
VGS=4.5 V, VDS=10 V, ID=0.7 A
P VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
Gate−to−Source Charge
QGS N VGS=4.5 V, VDS=10 V, ID=0.7 A
P VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
Gate−to−Drain Charge
QGD
N
VGS=4.5 V, VDS=10 V, ID=0.7 A
P VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
N
P
VGS=4.5 V, VDD=10 V,
ID=0.5 A, RG=20 W
VGS=−4.5 V, VDD=−4.0 V,
ID=−0.5 A, RG=8.0 W
Forward Diode Voltage
Reverse Recovery Time
VSD
N
P
VGS=0 V, TJ=25°C
IS=0.23 A
IS=−0.23 A
N
P
VGS=0 V, TJ=125°C
IS=0.23 A
IS=−0.23 A
tRR N
P
VGS=0 V,
dIS/dt=90 A/ms
IS=0.23 A
IS=−0.23 A
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
20
−8.0
0.6
−0.45
Typ
27
−10.5
22
−6.0
0.92
−0.83
−2.1
2.2
0.29
0.22
0.36
0.32
0.51
2.0
2.0
33
160
13
38
2.8
28
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
0.76
0.76
0.63
0.63
0.410
0.078
Max Units
V
mV/ °C
1.0 mA
1.0
10 mA
10
1.5
−1.0
V
−mV/ °C
0.375
0.30
0.445
0.46
0.90
W
S
46 pF
225
22
55
5.0
40
3.0 nC
4.0
ms
1.1 V
1.1
ms
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NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.4
VGS = 4.5 V to 2.2 V
1.2 VGS = 2 V
TJ = 25°C
1.8 V
1
0.8
0.6 1.6 V
0.4
0.2
0
0
1.4 V
1.2 V
24 6 8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 1. On−Region Characteristics
1.2
VDS 10 V
1
0.8
0.6
0.4
TJ = 125°C
0.2
0
0
25°C
TJ = −55°C
0.4 0.8 1.2 1.6 2 2.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.7
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
0.3 TJ = 25°C
0.2 TJ = −55°C
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.7
VGS = 2.5 V
0.6
0.5
TJ = 125°C
0.4 TJ = 25°C
0.3 TJ = −55°C
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1
1.2 1.4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
2
ID = 0.63 A
1.8 VGS = 4.5 V
and 2.5 V
1.6
1.4
1.2
1
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
80
60
40
20
0
0
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
5 10 15
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
20
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NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
4
3
2 QGS
QG(TOT)
QGD
VGS
1
ID = 0.63 A
TJ = 25°C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
0.7
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ = 150°C
TJ = 25°C
0.2 0.4 0.6 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
1
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NTJD4105C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.4
VGS = −4.5 V to −2.6 V
1.2 VGS = −2.2 V
−2 V
1
TJ = 25°C
−1.8 V
1.4
VDS −10 V
1.2
1
0.8 0.8
−1.6 V
0.6 0.6
0.4
0.2
0
0
−1.4 V
−1.2 V
24 6
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 9. On−Region Characteristics
0.4 TJ = 125°C
0.2
0
0
25°C
TJ = −55°C
0.4 0.8 1.2 1.6 2 2.4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Transfer Characteristics
0.5
VGS = −4.5 V
0.4
0.3 TJ = 125°C
0.2 TJ = 25°C
TJ = −55°C
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
−ID, DRAIN CURRENT (AMPS)
Figure 11. On−Resistance vs. Drain Current
and Temperature
1.6
ID = −0.7 A
VGS = −4.5 V
1.4 and −2.5 V
1.2
0.5
VGS = −2.5 V
0.4
0.3
0.2
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0
0 0.2 0.4 0.6 0.8 1
1.2 1.4
−ID, DRAIN CURRENT (AMPS)
Figure 12. On−Resistance vs. Drain Current
and Temperature
300
TJ = 25°C
VGS = 0 V
240
Ciss
180
1 120
0.8 60
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. On−Resistance Variation with
Temperature
0
−8
Coss
Crss
−6 −4 −2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 14. Capacitance Variation
0
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