STPS80H100TV.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 STPS80H100TV 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
® STPS80H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 40 A
100 V
150 °C
0.65 V
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOODTRADE OFF BETWEEN LEAKAGECUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
K2 A2
K1 A1
ISOTOPTM
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequen cy circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
Tstg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
100
RMS forward current
125
Average forward current
Tc = 120°C
δ = 0.5
Per diode
Per device
40
80
Surge non repetitive forward current tp = 10 ms sinusoidal
700
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
2
Non repetitive peak reverse current tp = 100 µs square
5
Storage temperature range
- 55 to+ 150
Maximum operating junction temperature *
150
Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
*
:
dPtot
dTj
<
1
Rth(ja)
thermal runaway condition for a diode on its own heatsink
July 1999 - Ed: 3A
1/4
DataSheet4 U .com

No Preview Available !

www.DataSheet4U.com
STPS80H100TV
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
Rth (c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per leg
Total
Coupling
Value
1
0.55
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 40 A
Tj = 125°C IF = 40 A
Tj = 25°C
IF = 80 A
Tj = 125°C IF = 80 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0022 x IF2(RMS)
Min.
Typ.
7
0.61
0.7
Max.
20
25
0.78
0.65
0.89
0.74
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
35
30
25
20
15
10
5
0
0 5 10
δ = 0.1 δ = 0.2
δ = 0.05
IF(av) (A)
15 20 25 30
δ = 0.5
δ=1
T
δ=tp/T
tp
35 40 45 50
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
50
45
Rth(j-a)=Rth(j-c)
40
35
30
25 Rth(j-a)=5°C/W
20
15 T
10
5 δ=tp/T
tp
Tamb(°C)
0
0 25 50 75 100 125 150
2/4
DataSheet4 U .com

No Preview Available !

www.DataSheet4U.com
STPS80H100TV
Fig. 3: Non repetitive surge peak forward current Fig. 4: Relative variation of thermal impedance
versusoverloadduration(maximum values, perdiode). junction to case versus pulse duration (per diode).
IM(A)
500
400
300
200
100 IM
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=110°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
5E+0
Fig. 5: Reverse leakage current versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
voltage applied (typical values, per diode).
IR(µA)
1E+4
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
C(nF)
5.0
1.0
0.1
1
2
F=1MHz
Tj=25°C
VR(V)
5 10 20
50 100
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
100
10
Tj=125°C
Tj=25°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
3/4
DataSheet4 U .com

No Preview Available !

www.DataSheet4U.com
STPS80H100TV
PACKAGE MECHANICAL DATA
ISOTOPTM
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
REF.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
11.80 12.20 0.465 0.480
8.90 9.10 0.350 0.358
7.8 8.20 0.307 0.323
0.75 0.85 0.030 0.033
1.95 2.05 0.077 0.081
37.80 38.20 1.488 1.504
31.50 31.70 1.240 1.248
25.15 25.50 0.990 1.004
23.85 24.15 0.939 0.951
24.80 typ.
0.976 typ.
14.90 15.10 0.587 0.594
12.60 12.80 0.496 0.504
3.50 4.30 0.138 0.169
4.10 4.30 0.161 0.169
4.60 5.00 0.181 0.197
4.00 4.30 0.157 0.69
4.00 4.40 0.157 0.173
30.10 30.30 1.185 1.193
Ordering type
Marking
STPS80H100TV STPS80H100TV
Package
ISOTOP
Epoxy meets UL94,V0
Weight
27g
without screws
Base qty
10
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
DataSheet4 U .com