STPS8H100.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 STPS8H100 데이타시트 다운로드

No Preview Available !

STPS8H100
High voltage power Schottky rectifier
K
A
NC
D2PAK
STPS8H100G
A
K
TO-220AC
STPS8H100D
A
K
TO-220FPAC
STPS8H100FP
Datasheet - production data
Description
Schottky barrier rectifier designed for high
frequency compact switched mode power
supplies such as adaptators and on board DC/DC
converters.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF(max)
8A
100 V
175° C
0.58 V
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Insulated package:
– TO-220FPAC
Insulating voltage = 2000 V AC
Typical package capacitance = 12 pF
Avalanche capability specified
April 2014
This is information on a product in full production.
DocID5387 Rev 11
1/10
www.st.com

No Preview Available !

Characteristics
1 Characteristics
STPS8H100
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
δ = 0.5
TO-220AC, D2PAK TC = 165° C
TO-220FPAC
TC = 150° C
Surge non repetitive forward current
tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 10 µs Tj = 125° C
Storage temperature range
Maximum operating junction temperature
Value
100
30
Unit
V
A
8A
250
750
-65 to + 175
175
A
W
°C
°C
Symbol
Rth(j-c) Junction to case
Table 3. Thermal resistance
Parameter
TO-220AC, D2PAK
TO-220FPAC
Value
1.6
4
Unit
° C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ
IR (1) Reverse leakage current
VF (2) Forward voltage drop
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 8 A
IF = 10 A
IF = 16 A
2
0.56
0.59
0.65
Max.
4.5
6.0
0.71
0.58
0.77
0.64
0.81
0.68
To evaluate the conduction losses use the following equation:
P = 0.48 x IF(AV) + 0.0125 IF2(RMS)
Unit
µA
mA
V
2/10
DocID5387 Rev 11

No Preview Available !

STPS8H100
Characteristics
Figure 1. Average forward power
dissipation versus average
forward current
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012
δ = 0.05
3
δ = 0.1 δ = 0.2
IF(av) (A)
456
δ = 0.5
δ=1
T
δ=tp/T
tp
7 8 9 10
Figure 2. Normalized avalanche power derating
versus pulse duration
PARM(tp)
PARM(10 µs)
1
0.1
0.01
0.001
1
tp(µs)
10 100 1000
Figure 3. Average forward current versus
ambient temperature, δ = 0.5,
(TO-220AC, D2PAK)
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
Rth(j-a)=15°C/W
δ=tp/T
tp
Tamb(°C)
0
0 20 40 60 80 100 120 140 160 180
Figure 4. Average forward current versus
ambient temperature, δ = 0.5,
(TO-220FPAC)
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
δ=tp/T
0
0 20
tp
40
Rth(j-a)=50°C/W
Tamb(°C)
60 80 100 120 140 160 180
Figure 5. Non repetitive surge peak
forward current versus overload duration -
maximum values, per diode (TO-220AC, D2PAK)
Figure 6. Non repetitive surge peak forward
current versus overload duration
- maximum values (TO-220FPAC)
IM(A)
160
140
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
Tc=75°C
Tc=100°C
1E-2
t(s)
1E-1
Tc=125°C
1E+0
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1E-3
t
δ=0.5
Tc=75°C
Tc=100°C
1E-2
t(s)
1E-1
Tc=125°C
1E+0
DocID5387 Rev 11
3/10
10

No Preview Available !

Characteristics
STPS8H100
Figure 7. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC, D2PAK)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Figure 8. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 10. Junction capacitance versus reverse
voltage applied (typical values)
IR(µA)
5E+3
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
C(pF)
1000
500
200
100
1
F=1MHz
Tj=25°C
VR(V)
10
100
Figure 11. Forward voltage drop versus forward
current (maximum values)
IFM(A)
50.0
10.0
Tj=125°C
1.0
Tj=25°C
0.1
0
VFM(V)
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
Figure 12. Thermal resistance junction to
ambient versus copper surface under tab
(D²PAK)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 12
Epoxy printed circuit board FR4,
copper thickness: 35 µm
S(Cu) (cm²)
16 20 24 28 32 36 40
4/10
DocID5387 Rev 11

No Preview Available !

STPS8H100
2 Package Information
Package Information
Epoxy meets UL94,V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m (TO-220AC)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 13. D2PAK dimension definitions
E
L1
H
L2
e
E1
b2
b
D1
A
C2
D
C
A1
L4
L
L3
Gauge
plane
0 - 8°
DocID5387 Rev 11
5/10
10