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® STPS8L30H
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
8A
30 V
150 °C
0.40 V
TAB
FEATURES AND BENEFITS
n LOW COST DEVICE WITH LOW DROP FOR-
WARD VOLTAGE FOR LESS POWER
DISSIPATION AND REDUCED HEATSINK
n OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE
HIGHEST YIELD IN THE APPLICATIONS
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters.
Packaged in IPAK, this device is especially in-
tended for use as a Rectifier at the secondary of
3.3V SMPS or DC/DC units.
IPAK
3
2
1
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
Tstg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 135°C δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
Non repetitive peak reverse current tp = 100µs square
Storage temperature range
Maximum junction temperature
Critical rate of rise of reverse voltage
Value
30
7
8
75
1
2
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
June 2000 - Ed: 1A
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STPS8L30H
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Parameter
Value
2.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 25°C
IF = 8 A
Tj = 125°C
Tj = 25°C
IF = 16 A
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
Min.
Typ.
15
0.35
0.48
Max.
1
40
0.49
0.4
0.63
0.57
Unit
mA
V
To evaluate the maximum conduction losses use the following equation :
P = 0.23 x IF(AV) + 0.021 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
5.0
δ = 0.1 δ = 0.2
4.0 δ = 0.05
δ = 0.5
3.0
δ=1
2.0
T
1.0
IF(av) (A)
δ=tp/T
tp
0.0
0 2 4 6 8 10
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
9
8
Rth(j-a)=Rth(j-c)
7
6
5
4 Rth(j-a)=70°C/W
3
T
2
1
δ=tp/T
tp
Tamb(°C)
0
0 25 50 75 100 125 150
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STPS8L30H
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
3E+2
1E+2
Tj=150°C
1E+1
Tj=125°C
1E+0
1E-1
1E-2
1E-3
0
Tj=25°C
VR(V)
5 10 15 20 25 30
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
2000
1000
F=1MHz
Tj=25°C
500
200
100
1
VR(V)
10
40
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
100.0
10.0
Typical values
Tj=150°C
Tj=125°C
1.0
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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STPS8L30H
PACKAGE MECHANICAL DATA
IPAK
E
B2
L2
H
L
L1
B6
B3
B
V1
B5
G
A
C2
D
A1
C
A3
DIMENSIONS
REF. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2
A1 0.9
2.4 0.086
1.1 0.035
0.094
0.043
A3 0.7
B 0.64
1.3 0.027
0.9 0.025
0.051
0.035
B2 5.2
B3
5.4 0.204
0.85
0.212
0.033
B5 0.3
0.035
B6 0.95 0.037
C 0.45
0.6 0.017
0.023
C2 0.48
D6
0.6 0.019
6.2 0.236
0.023
0.244
E 6.4
G 4.4
H 15.9
6.6 0.252
4.6 0.173
16.3 0.626
0.260
0.181
0.641
L9
L1 0.8
9.4 0.354
1.2 0.031
0.370
0.047
L2
0.8 1
0.031 0.039
V1 10°
10°
Ordering type Marking
STPS8L30H
ST LS30
n Epoxy meets UL94,V0
Package
IPAK
Weight
0.35g
Base qty
75
Delivery mode
Tube
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change without notice. This publication supersedes and replaces all information previously supplied.
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