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SKP02N120
SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-220-3-1
(TO-220AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SKP02N120
SKB02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4278
TO-263AB(D2PAK) Q67040-S4279
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, 100VVCC1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
Unit
V
A
4.5
2
9
±20
10
62
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02

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SKP02N120
SKB02N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
Conditions
RthJC
RthJCD
RthJA
RthJA
TO-220AB
TO-263AB(D2PAK)
Max. Value
2.0
4.5
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=100µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
VGE=0V, IF=2A
Tj=25°C
Tj=150°C
IC=100µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSC10µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
Unit
typ. max.
- -V
3.1 3.6
3.7 4.3
2.0 2.5
1.75
45
µA
- 25
- 100
- 100 nA
1.5 - S
205 250 pF
28 34
12 15
11 - nC
7 - nH
24 - A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02

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SKP02N120
SKB02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=2A,
VGE=15V/0V,
RG=91,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=2A,
diF/dt=250A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
23
16
260
61
0.16
0.06
0.22
50
0.10
4.2
400
Unit
max.
30 ns
21
340
80
0.21 mJ
0.08
0.29
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=800V,
IC=2A,
VGE=15V/0V,
RG=91,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=800V, IF=2A,
diF/dt=300A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
26
14
290
85
0.27
0.11
0.38
90
0.30
6.7
110
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Unit
max.
31 ns
17
350
102
0.33 mJ
0.15
0.48
ns
µC
A
A/µs
Power Semiconductors
3
Jul-02