BD652.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 BD652 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
1

No Preview Available !

www.DataSheet4U.com
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
VCB = -70 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = -3 V
IB = -12 mA
IB = -50 mA
IB = -50 mA
IC = -3 A
IC = -3 A
IC = -5 A
IC = -5 A
VCE = -3 V IC = -3 A
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-60
-80
-100
-120
750
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
-5
-2
-2.5
-3
-2.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.0 °C/W
62.5 °C/W
2
DataSheet4 U .com
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.

No Preview Available !

www.DataSheet4U.com
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
50000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS135AD
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
TCS135AB
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
1000
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5 -1·0
IC - Collector Current - A
Figure 1.
-1·0
-0·5
-10 -0·5 -1·0
TC = -40°C
TC = 25°C
TC = 100°C
-10
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
TCS135AC
TC = -40°C
TC = 25°C
-2·5 TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
-10
3

No Preview Available !

www.DataSheet4U.com
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS135AC
-10
-1·0
4
DataSheet4 U .com
-0·1
-0.01
-1·0
BD646
BD648
BD650
BD652
-10 -100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
-1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.

No Preview Available !

www.DataSheet4U.com
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
ø
3,96
3,71
see Note B
10,4
10,0
2,95
2,54
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
0,97
0,61
123
1,70
1,07
2,74
2,34
5,28
4,88
14,1
12,7
0,64
0,41
2,90
2,40
VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
VERSION 2
MDXXBE
5