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Product Bulletin OP906
June 1996
PIN Silicon Photodiode
Type OP906
Features
Narrow receiving angle
Linear response vs irradiance
Fast switching time
T-1 package style
Small package ideal for space limited
applications
Description
The OP906 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The narrow receiving angle
provides excellent on-axis coupling.
These devices are 100% production
tested using infrared light for close
correlation with Optek’s GaAs and
GaAlAs emitters. Lead spacing is 0.100
inch (2.54 mm).
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4)
To calculate typical dark current
ambient temperature in o C.
in
nA,
use
the
formula
ID
=
10(0.042 TA-1.5) where TA is
Typical Performance Curves
Relative Response vs.
Wavelength
Coupling Characteristics
OP906 and OP266
VR = 5 V
IF = 20 mA
λ- Wavelength - nm
Distance Between Lens Tips -inches
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
3-54
(972) 323-2200
Fax (972) 323-2396

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Type OP906
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
IL Reverse Light Current
ID Reverse Dark Current
V(BR)R Reverse Breakdown Voltage
VF Forward Voltage
CT Total Capacitance
tr, tf Rise Time, Fall Time
MIN
16
60
TYP MAX UNITS
TEST CONDITIONS
35 µA VR = 5 V, Ee = 0.50 mW/cm2(3)
1 60 nA VR = 30 V, Ee = 0
V IR = 100 µA
1.2 V IF = 1 mA
4 pF VR = 20 V, Ee = 0, f = 1.0 MHz
5 ns VR = 20 V, λ= 850 nm, RL = 50
Typical Performance Curves
Normalized Light Current vs
Reverse Voltage
TA = 25o C
λ= 935 nm
Normalized to VR = 5 V
VR - Reverse Voltage - V
Light Current vs. Irradiance
VR
TA
=
=
5V
25oC
λ= 935 nm
Ee - Irradiance - mW/cm2
Total Capacitance vs
Reverse Voltage
TA
Ee
=
=
25o C
0 mW/cm2
f = 1 MHz
VR - Reverse Voltage - V
Switching Time Test Circuit
Normalized Light and Dark
Current vs Ambient Temperature
VR = 5 V
λ= 935 nm
NTAor=m2a5liozeCd to
Light Current
Dark Current
TA - Ambient Temperature - oC
Light Current vs. Angular
Displacement
Test Conditions:
λ= 935 nm
VR = 5 V
Distance Lens to
Lens = 1.5 inches
θ - Angular Displacement - Deg.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
3-55