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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
VRD1
VRG1
VDS2
VDS1
RFin
VGS1
VGS2
VGS3
3 Stages IC
Quiescent Current
Temperature Compensation
Functional Block Diagram
VDS3/RFout
PIN CONNECTIONS
GND
VDS2
VRD1
VRG1
VDS1
RFin
VGS1
VGS2
VGS3
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15
VDS3/
14 RFout
13
12 GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
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Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
Stage 1
Stage 2
Stage 3
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
65
- 0.5, +8
- 65 to +175
175
20
Value (1)
10.5
5.1
2.3
Class
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
Rating
3
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. Peak/Avg. Ratio = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 29 31.5 — dB
Input Return Loss
IRL — - 25 - 10 dB
Adjacent Channel Power Ratio
Pout = 0.4 W Avg.
Pout = 1.26 W Avg.
Stability
(10 mW<Pout<5 W CW, Load VSWR = 3:1, All Phase Angles,
24 V<Vds<28 V)
ACPR
dBc
- 53.5
- 50
— - 52 —
No Spurious > - 60 dBc
TYPICAL PERFORMANCES (In Motorola Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA,
IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Psat — 43 — Watts
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
Gain Flatness in 30 MHz Bandwidth
Deviation from Linear Phase in 30 MHz Bandwidth
IQT
±5
GF — 0.13 —
Φ ±1 —
%
dB
°
Delay @ Pout = 0.4 W CW Including Output Matching
Part to Part Phase Variation
Delay
1.6
Φ∆ ±15 —
ns
°
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(continued)
MW4IC2230MBR1 MW4IC2230GMBR1
MOTOROLA RF DEVICE DATA
2
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
TYPICAL PERFORMANCES (In Motorola Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc,
Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,
2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps — 31.5 — dB
Intermodulation Distortion
IM3 — - 52 — dBc
Adjacent Channel Power Ratio
ACPR
- 55
dBc
Input Return Loss
IRL — - 26 — dB
MOTOROLA RF DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
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VD2
VD1
+
RF
INPUT
C1 C6
Z1
VG1 R1
VG2 R2
VG3 R3
+
C2 C5
Freescale Semiconductor, Inc.
1
2
3 NC
4 NC
5
6
DUT 16
NC 15
14 Z4
7 NC
8
9 Quiescent Current
10 Temperature Compensation NC 13
11 12
VD3
+
Z2 C7 C3
C9
Z5
C10
RF
OUTPUT
Z6 Z7
C11 C12
Z3
+
C8 C4
Z1
Z2, Z3
Z4
Z5
2.180x 0.090Microstrip
0.040x 0.430Microstrip
0.350x 0.240Microstrip
0.420x 0.090Microstrip
Z6
Z7
PCB
1.120x 0.090Microstrip
0.340x 0.090Microstrip
Taconic TLX8 - 0300, 0.030, εr = 2.55
Figure 1. MW4IC2230MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
10 µF, 35 V Tantalum Capacitors
TAJD106K035
AVX
C5, C6, C7, C8, C12
8.2 pF 100B Chip Capacitors
100B8R2CW
ATC
C9, C10
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C11
0.3 pF 100B Chip Capacitor
100B0R3BW
ATC
R1, R2, R3
1.8 kW Chip Resistors (1206)
MW4IC2230MBR1 MW4IC2230GMBR1
MOTOROLA RF DEVICE DATA
4
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C2
VD2
VD1
C1
R1
VG1
R2
VG2
Freescale Semiconductor, Inc.
MW4IC2230
Rev 1
C5
C6
R3
VG3
C7
C9
C10 C11
C8
C3
VD3
C4
C12
GND
Figure 2. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
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5