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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC915/D
The RF Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Motorola’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage
structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA.
Typical GSM/GSM EDGE Performances:
240 mA, 869-894 MHz and 921-960 MHz
26
Volts,
IDQ1
=
60
mA,
IDQ2
=
Output Power — 3 Watts Avg.
Power Gain — 31 dB
Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -65 dBc
Spectral Regrowth @ 600 kHz Offset = -83 dBc
EVM — 1.5%
Typical Performance: 860-960 MHz, 26 Volts
Output Power — 15 Watts CW
Power Gain — 30 dB
Efficiency — 44%
On Chip Matching (50 Ohm Input, >3 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz,
Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA
Can Be Bolted or Soldered through a Hole in the Circuit Board for
Maximum Thermal Performance
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW4IC915MBR1
MW4IC915GMBR1
GSM/GSM EDGE,
N-CDMA, W-CDMA
860 - 960 MHz, 15 W, 26 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC915MBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC915GMBR1
PIN CONNECTIONS
VDS1
RFin
RFout/VDS2
GND 1
NC 2
NC 3
VDS1
4
NC 5
16 GND
15 NC
VGS1
VGS2
Temperature Compensation
Functional Block Diagram
RFin
NC
VGS1
VGS2
NC
GND
6 14
7
8
9
10 13
11 12
(Top View)
RFout /
VDS2
NC
GND
REV 2
MMoOtorToOla,RInOc.L2A00R3 F DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
GSM EDGE Application
(Pout = 7.5 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
CDMA Application
(Pout = 3.75 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22-A113
Symbol
VDSS
VGS
Tstg
TJ
Symbol
RθJC
Value
65
-0.5. +15
-65 to +175
175
Max
1.48
1.59
1.63
Class
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
Rating
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
TWO-TONE FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
Gps 29 31 —
Drain Efficiency
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
η 29 31 —
Third Order Intermodulation Distortion
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IMD3
-40
-29
Input Return Loss
(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IRL — -15 -10
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
Unit
dB
%
dBc
dB
(continued)
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
2
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ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
PERFORMANCE TESTS (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA
Quiescent Current Accuracy over Temperature (-10 to 85°C)
at Nominal Value
IQT
±5
Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
GF — 0.2 —
Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW
(Characterize from 869-894 MHz and 920-960 MHz)
Φ
±0.6 —
Delay @ Pout = 3 W CW
Delay
2.5
Insertion Phase Window @ Pout = 3 W CW
Φ∆ ±15 —
TYPICAL PERFORMANCE GSM/GSM EDGE (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA,
869-894 MHz and 921-960 MHz
Output Power at 1dB Compression Point
P1dB
20
Common-Source Amplifier Power Gain
(Pout = 15 W CW)
Drain Efficiency
(Pout = 15 W CW)
Input Return Loss
(Pout = 15 W CW)
Error Vector Magnitude
(Pout = 3 W Avg. including 0.6% rms source EVM)
Spectral Regrowth at 400 kHz Offset
(Pout = 3 W Avg.)
Spectral Regrowth at 600 kHz Offset
(Pout = 3 W Avg.)
Gps — 30 —
η — 44 —
IRL — -15 —
EVM
1.5
SR1 — -65 —
SR2 — -83 —
Unit
%
dB
°
ns
°
Watts
dB
%
dB
%
dBc
dBc
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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VDS1
RF
INPUT
+
C1 C2 C3
Z1
VGS1 R1
+
C6 C5 C4
VGS2 R2
+
C9 C8 C7
Freescale Semiconductor, Inc.
1
2 NC
3 NC
4
5 NC
6
7 NC
8
9
10 NC
11
16
NC 15
L1 VDS2
++
C10 C11 C15 C14
Temperature
Compensation
14 Z2
NC 13
12
C12
Z3 Z4 M1 M4
RF
Z8 C16 Z9 OUTPUT
C13 Z5 Z7
Z6
M2 M3
Z1 0.086, 50 W Microstrip
Z2 0.133x 0.236Microstrip
Z3 0.435x 0.283Microstrip
Z4 0.171x 0.283Microstrip
Z5 0.429x 0.283Microstrip
Z6
Z7
Z8
Z9
PCB
0.157x 0.283Microstrip
0.429x 0.283Microstrip
0.394x 0.088Microstrip
0.181x 0.088Microstrip
Taconic TLX8, 0.030, εr = 2.55
Figure 1. Two-Tone 860-960 MHz Test Fixture Schematic
Table 1. Two-Tone 860-960 MHz Test Fixture Component Designations and Values
Designators
C1, C6, C9, C14
C2, C5, C8, C11
C3, C4, C7, C10, C16
C12, C13
C15
R1, R2
L1
M1, M2, M3, M4
Description
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22 pF Chip Capacitors, B Case, ATC #100B220JCA500X
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
10 k, 1/4 W Chip Resistor (1206)
12.5 nH Inductor
0.283, 90_ Mitered Microstrip Bends
MW4IC915MBR1 MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
4
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C1 VDS1
C2
C3
C6
R1
VGS1
C4
C5
C7
C8
C9
VGS2
R2
MW4IC915MB
C11 Rev 0
C10
L1
C12
C13
VDS2
C14
C15
C16
Figure 2. Two-Tone 860-960 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MW4IC915MBR1 MW4IC915GMBR1
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5