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FQB25N33
330V N-Channel MOSFET
Features
• 25A, 330V, RDS(on) = 0.23@VGS = 10V
• Low gate charge (typical 58nC)
• Low Crss (typical 40pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
AD FREE I
• RoHS Compliant
September 2006
QFET ®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
Drain Current
- Pulsed
Gate -Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25oC) *
Power Dissipation (TC = 25oC)
- Derate above 25oC
TJ, TSTG Operating and Storage Temperature
TL
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB25N33 Rev. A
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB25N33
330
25
16.0
100
±30
370
25
37
4.5
3.1
250
2.0
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
oC
FQB25N33
0.5
40
62.5
Units
oC/W
oC/W
oC/W
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Package Marking and Ordering Information
Device Marking
FQB25N33
Device
FQB25N33
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Forward
VDS = 330V,VGS = 0V
VDS = 264V,TC =125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
330
--
--
--
--
--
--
0.34
--
--
--
--
--
--
1
10
100
-100
V
V/oC
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Drain to Source On Resistance
Forward Transonductance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 12.5A,
VDS = 50V, ID = 12.5A, (Note 4)
3.0
--
--
-- 5.0
0.18 0.23
1 --
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 1510 2010 pF
-- 290 385 pF
-- 40 60 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate to Source Gate Charge
Qgd Gate to Drain Charge
VDD = 165V, ID = 25A
RGS = 25
(Note 4, 5)
VDS = 297V, ID = 25A,
VGS = 15V,
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0, IS = 25A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0, IS = 25A,
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating : Pluse width Limited by maximum junction temperature
2:
3:
L=
ISD
1.79mH, IAS
25A, di/dt
=
22050AA,/VµsD,DV=D5D0V,BRVGDS=S2, 5Sta,rStintagrtTinJg=T2J5=oC25oC
4: Pulse Test : Pulse width 300µs, Duty cycle 2%
5: Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
--
--
--
--
20
100
90
70
58
11.2
21
35
160
145
110
75
--
--
-- 25
-- 100
-- 1.5
275 --
3.6 --
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
FQB25N33 Rev. A
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS
Top : 15.0 V
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
10 6.0 V
5.5 V
Bottom : 5.0 V
1
* Notes :
1. 250µs Pulse Test
2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
10 150oC
25oC
-55oC
1
0.1
2
* Notes :
1. V = 50V
DS
2. 250µs Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0
VGS = 10V
VGS = 15V
* Note : TJ = 25oC
10 20 30 40 50 60
ID, Drain Current [A]
100
10
1
0.1
0.01
1E-3
1E-4
0.0
150oC
25oC
* Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
3000
2000
1000
0
0.1
FQB25N33 Rev. A
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
1 10
VDS, Drain-Source Voltage [V]
100
3
12
VDS = 66V
10 VDS = 165V
VDS = 264V
8
6
4
2
* Note : ID = 25A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2.
I
D
=
250
µA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 12.5 A
-50 0
50 100
TJ, Junction Temperature [oC]
150
200
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
500
100
10
1
0.1
1
100 µs
1ms
10ms
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10 100
VDS, Drain-SourceVoltage[V]
1000
30
25
20
15
10
5
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 11. Transient Thermal Response Curve
2
1
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 E -3
1 0 -5
s in g le p u ls e
PDM
t1
t2
* N o te s :
1 . Z θJC (t) = 0 .5 0C /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θJC (t)
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
101
FQB25N33 Rev. A
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Gate Charge Test Circuit & Waveform
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FQB25N33 Rev. A
5 www.fairchildsemi.com