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SCG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
1800 – 2500 MHz
+24 dBm P1dB
+40 dBm OIP3
15 dB Gain
5 dB Noise Figure
Single Positive Supply (+8V)
Available in a lead-free / green
SOT-89 Package Style
Applications
Mobile Infrastructure
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The SCG015 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +41
dBm OIP3 and +24 dBm of compressed 1dB power and is
housed in a lead-free/green/RoHS-compliant SOT-89 SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as CDMA, CDMA2000, and W-CDMA,
where high linearity and medium power is required. In
addition, the SCG015 will work for numerous other
applications within the 1800 to 2500 MHz frequency range.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Pin No.
1
3
2, 4
Function
Input
Output/Bias
Ground
Specifications (1)
Typical Performance (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
1800
13.5
16
+23
+37.5
85
Typ
2140
15
20
10
+24
+40
5
5
100
Max
2500
135
1. Test conditions unless otherwise noted: 25°C, Vsupply = +8 V, in tuned application circuit with
Rbias = 30 Ω.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
1900
2140
16.5 15
-16 -20
-11 -10
+24 +24
+40 +40
55
2450
14.5
-12
-9
+23
+40
5
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
Device Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 °C
-55 to +150 °C
180 mA
+15 dBm
+250 °C
Part No.
Description
SCG015B*
0.2 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOT-89 Pkg)
SCG015B-G
0.2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
SCG015B-PCB1960 1960 MHz Fully Assembled Eval. Board
SCG015B-PCB2140 2140 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 6 June 2005 Rev. 1

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SCG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Typical Device Data
S-parameters (Vdevice = +5V, Icc = 100 mA, 25 °C, unmatched 50 ohm system)
Gain / Maximum Stable Gain
30
DB(|S[2,1]|)
DB(GMax)
S11
Swp Max
2.50123GHz
S22
Swp Max
2.50123GHz
25
20
3.0
4.0
5.0
10.0
3.0
4.0
5.0
10.0
15 -0.2
-0.2
10
1.8
1.9
2 2.1 2.2 2.3 2.4 2.5
Frequency (GHz)
-0.4
Swp Min
1.79083GHz
-0.4
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 1800 – 2500 MHz, with markers placed at 1.8 – 2.5 GHz in 0.05 GHz increments.
Swp Min
1.79083GHz
Freq (MHz)
1800
1900
2000
2100
2200
2300
2400
2500
S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25° C, unmatched 50 ohm system, calibrated to device leads)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
-6.70
80.76
15.90
24.47
-28.55
-25.74
-5.34
-7.55
68.30
15.77
16.51
-28.96
-32.29
-4.96
-8.60
53.47
15.66
7.76
-30.14
-38.84
-4.56
-9.85
35.06
15.53
-1.19
-31.49
-45.79
-4.12
-11.07
10.07
15.40
-10.90
-33.04
-59.63
-3.67
-11.69
-21.71
15.08
-20.90
-36.28
-78.21
-3.20
-10.87
-56.13
14.67
-31.83
-40.69
-106.46
-2.80
-9.15
-86.03
14.14
-43.53
-42.21
163.73
-2.44
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
156.39
156.21
155.58
155.07
153.49
150.85
147.22
142.35
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt
capacitors. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 6 June 2005 Rev. 1

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SCG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
1960 MHz Application Circuit (SCG015B-PCB1960)
Typical RF Performance at 25°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
1960 MHz
16.5 dB
-16 dB
-11 dB
+24 dBm
+40 dBm
+17 dBm
5 dB
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
RES
ID=R3
R=220 Ohm
RES
ID=R2
R=390 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
RES
ID=R4
R=22 Ohm
CAP
ID=C4
C=56 pF
IND
ID=L2
L=15 nH
IND
ID=L1
L=15 nH
SUBCKT
NET="SCG015"
IND
ID=L3
L=3.3 nH
CAP
ID=C7
C=1.2 pF
CAP
ID=C8
C=1.2 pF
CAP
ID=C3
C=.1uF
CAP
ID=C2
C=1000 pF
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C5
C=56 pF
Device Voltage
Quiescent Current
Please see note 2 on page 1.
+5 V
100 mA
C7 placed at silkscreen marker ‘A” or center of component
placed at 3.9 deg. @ 1900 MHz away from pin 1.
C8 is placed at silkscreen
marker ‘7” or center of
component placed at 32 deg.
@ 1.9 GHz away from pin 3.
Ssg, OIP3 & P1dB vs.
Temperature @ 1.96GHz
26
44
ACPR1 vs. Pout
vs. Temperature at 1.96GHz
-40
24 43 -45
22 42
-50
20 41
18 40 -55
16
14
12
10
-40
Gain P1dB OIP3
-15 10 35 60
Temperature (°C)
39
38
37
36
85
-60
-65
-70
11
85°C -40°C 25°C
13 15
Pout (dBm)
17
2140 MHz Application Circuit (SCG015B-PCB2140)
Typical RF Performance at 25°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Noise Figure
Device Voltage
Quiescent Current
Please see note 2 on page 1.
2140 MHz
15 dB
-20 dB
-10 dB
+24 dBm
+40 dBm
5 dB
+5 V
100 mA
24
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
R ES
ID=R3
R=220 Ohm
RES
ID=R2
R=390 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
IND
ID=L1
L=15 nH
S UBC KT
N ET=" SCG015"
RES
ID=R4
R=22 Ohm
C AP
ID=C4
C=56 pF
IN D
ID =L3
L=3.3 nH
CAP
ID=C7
C=.7 pF
C7 placed at silkscreen marker ‘A” or center of
component placed at 4.4 deg. @ 2.14 GHz away
from pin 1.
Ssg, OIP3, & P1dB vs.
Temperature @ 2.14GHz
42
CAP
ID=C8
C=1 pF
CAP
ID=C3
C=.1uF
CAP
ID=C2
C=1000 pF
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C5
C=56 pF
C8 is placed at silkscreen marker ‘7” or
center of component placed at 37 deg. @
2.14 GHz away from pin 3.
22 41
20 40
18 39
16 38
14
12
-40
Ssg P1dB OIP3
-15 10 35 60
Temperature (°C)
37
36
85
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 3 of 6 June 2005 Rev. 1

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SCG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
2450 MHz Reference Design
Typical RF Performance at 25°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Noise Figure
Device Voltage
Quiescent Current
Please see note 2 on page 1.
2450 MHz
14.5 dB
-12 dB
-9 dB
+23 dBm
+40 dBm
5 dB
+5 V
100 mA
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
RES
ID=R3
R=220 Ohm
RES
ID =R2
R=390 Ohm
PORT
P=1
Z=50 Ohm
C AP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
IND
ID=L1
L=15 nH
SUBCKT
NET="SCG015"
RES
ID=R4
R=22 Ohm
CAP
ID=C4
C=56 pF
RES
ID =L3
R=0 Ohm
CAP
ID=C8
C=1 pF
CAP
ID=C3
C=.1uF
CAP
ID=C2
C=1000 pF
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C5
C=56 pF
C8 is placed half way between silkscreen marker ‘3’ and ‘4’ or center of component placed at 23 deg. @ 2.45 GHz away from pin 3.
26
24
22
20
18
16
14
-40
Ssg, OIP3 and P1dB vs.
Temperature at 2.45GHz
Ssg P1dB OIP3
-15 10 35 60
Temperature (°C)
44
43
42
41
40
39
38
85
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 4 of 6 June 2005 Rev. 1

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SCG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
SCG015B (SOT-89 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an “S015”
designator with an alphanumeric lot code on the
top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application Notes”
section.
ESD / MSL Information
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes at between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the region
where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85 °C
128 °C / W
149 °C
Notes:
1. The thermal resistance is referenced from the
junction-to-case at a case temperature of 85° C.
2. This corresponds to the typical biasing condition of
+5V, 100 mA at an 85° C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 247° C.
Tjc = Tcase + Rth * Vde * Icc
MTTF vs. GND Tab Temperature
100000
10000
1000
100
60
70 80 90 100 110 120
Tab Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 5 of 6 June 2005 Rev. 1