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AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Product Features
Product Description
Functional Diagram
800 – 2200 MHz
+32.5 dBm P1dB
-51 dBc ACLR @ ¼W PAVG
-55 dBc IMD3 @ ¼W PEP
The AP601 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has 13.5 dB gain, while
being able to achieve high performance for 800-2200 MHz
applications with up to +32.5 dBm of compressed 1dB power.
17% Efficiency @ ¼W PAVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 1W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
The AP601 uses a high reliability, high voltage
InGaP/GaAs HBT process technology. The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP601 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
Applications
Mobile Infrastructure
Final stage amplifier for repeaters
The AP601 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-35
20 mA
-40 40 mA
-45 50 mA
-50
-55
-60
18
20 22 24
Average Output Power (dBm)
26
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Min
800
Typ
2140
+24
13.5
12
8
-51
-55
1
52
17
+32.5
40
+5
+28
Max
2200
Absolute Maximum Rating
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
940 1960 2140
+24 +24 +24
15.8 15 13.5
15 11 12
798
-50 -49 -51
-51 -62 -55
52 52 52
17 17 17
+32.5 +32.7 +32.5
40
+5
+28
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP601 has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
Parameter
Operating Case Temperature, TC
Storage Temperature, Tstg
Junction Temperature, Tj
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCBO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Rating
-40 to +85 ºC
-55 to +125 ºC
250 ºC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
80 mA
2.3 W
Ordering Information
Part No.
AP601-F
AP601-PCB900
AP601-PCB1960
AP601-PCB2140
Description
High Dynamic Range 28V 1.8W HBT Amplifier
920-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
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AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 40 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Gain / Maximum Stable Gain
40
35 DB(|S(2,1)|) DB(GMax())
S11
Swp Max
3.00001GHz
S22
Swp Max
3.00001GHz
30 3.0 3.0
25 4.0 4.0
5.0 5.0
20
10.0
10.0
15
10
5
0 -0.2
-0.2
-5
-10
0 0.5 1 1.5 2 2.5
Frequency (GHz)
-0.4
Swp Min
3e-005GHz
-0.4
Swp Min
3e-005GHz
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
-9.60
-8.20
-5.47
-2.93
-2.02
-1.58
-1.69
-1.49
-1.52
-1.70
-2.01
-2.35
-2.78
-3.34
-4.04
-5.00
-5.86
S11 (ang)
-165.86
-156.90
-154.63
-164.90
-173.51
-179.10
177.02
173.06
168.28
162.02
153.47
142.58
130.51
119.29
111.03
109.46
118.67
S21 (dB)
22.23
21.64
20.66
18.00
15.57
13.78
12.16
11.02
10.09
9.48
9.14
8.93
8.73
8.50
8.34
8.17
8.03
S21 (ang)
169.20
160.86
144.37
121.17
107.46
98.50
89.73
82.27
75.95
69.46
61.67
52.54
42.07
30.77
17.30
1.87
-16.70
S12 (dB)
-46.52
-41.16
-36.22
-32.88
-31.96
-31.66
-30.97
-30.27
-29.97
-29.41
-28.83
-28.18
-27.42
-26.75
-26.07
-25.45
-25.11
S12 (ang)
80.76
69.46
55.53
35.73
24.64
18.33
22.20
13.95
9.68
5.89
1.59
-4.64
-11.50
-20.45
-30.92
-44.10
-62.65
S22 (dB)
-0.25
-0.38
-1.13
-2.85
-3.92
-4.42
-4.57
-4.73
-4.46
-4.15
-3.85
-3.63
-3.42
-3.20
-2.86
-2.39
-1.91
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-5.41
-14.13
-26.14
-41.81
-51.12
-58.97
-65.06
-70.40
-74.09
-77.84
-81.69
-85.86
-90.97
-97.68
-106.74
-119.23
-134.59
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
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AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz
copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP601 in a laboratory environment. The sequencing is not
required in the final system application.
Turn-on Sequence:
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
1. Attach input and output loads onto the evaluation board.
2. Turn on power supply Vcc = +28V.
3. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25mA).
4. Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 40 mA.
5. Turn on RF power.
Turn-off Sequence:
1. Turn off RF power.
2. Turn off power supply Vpd = +5V.
3. Turn off power supply Vbias = +5V.
4. Turn off power supply Vcc = +28V.
Notes:
1.
2.
3.
Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier.
Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 80 mA.
Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
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AP601
High Dynamic Range 1.8W 28V HBT Amplifier
920-960 Application Circuit (AP601-PCB900)
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
Frequency
940 MHz
W-CDMA Channel Power
+24 dBm
Power Gain
15.8 dB
Input Return Loss
15 dB
Output Return Loss
7 dB
ACLR
-50 dBc
IMD3 @ +24 dBm PEP
-51 dBc
Operating Current, Icc
52 mA
Collector Efficiency
17 %
Output P1dB
+32.5 dBm
Quiescent Current, Icq
40 mA
Vpd, Vbias
+5 V
Vcc +28 V
See note 3
5.1 Ohm
See note 4
See note 6
See note 5
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C1 is at 0.685” (28.09° @ 940 MHz) from the center of C24.
4. The center of C24 is placed at 0.310” (12.71°@ 940MHz) from the edge of the AP601 (U1).
5. The center of C26 is placed at 0.055” (2.26° @ 940 MHz) from the edge of the AP601 (U1).
6. The center of L4 is at 0.095” (3.90° @ 940 MHz) from the center of C26.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at components L3 and L4 for this particular reference design.
920-960 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
17
16
15
14
13
12
26
920 MHz
940 MHz
960 MHz
28
30 32
Output Power (dBm)
34
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
920 MHz
-45 940 MHz
960 MHz
-50
36
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
0
-5
-10
-15
-20
-25
0.8 0.85 0.9 0.95
1
Frequency (GHz)
S11
S22
1.05 1.1
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
-40
IMD3L
IMD3U
-50 IMD5
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
60
920 MHz
50 940 MHz
960 MHz
40
30
20
10
0
18 22 26 30 34
Output Power (dBm)
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
-50
-55
-60
-65
16
18 20 22 24
Average Output Power (dBm)
-60
-70
26 20
-60
22 24 26 28
Output Power, PEP (dBm)
-70
30 17
19 21 23 25
Average Output Power (dBm)
27
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
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AP601
High Dynamic Range 1.8W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP601-PCB1960)
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
Frequency
1960 MHz
W-CDMA Channel Power
+24 dBm
Power Gain
15 dB
Input Return Loss
11 dB
Output Return Loss
9 dB
ACLR
-49 dBc
IMD3 @ +24 dBm PEP
-62 dBc
Operating Current, Icc
52 mA
Collector Efficiency
17 %
Output P1dB
+32.7 dBm
Quiescent Current, Icq
40 mA
Vpd, Vbias
+5 V
Vcc +28 V
See note 4
See note 3
See note 5
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C5 is placed at 0.085” (7.26° @ 1960 MHz) from the edge of the AP601 (U1).
4. The center of L3 is placed at 0.035” (2.99° @ 1960 MHz) from the center of C5.
5. The center of C19 is placed at 0.755” (64.51° @ 1960 MHz) from the edge of the AP601 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
1930-1990 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
16
15
14
13
12
11
24
1930 MHz
1960 MHz
1990 MHz
26
28 30
Output Power (dBm)
32
ACLR1 vs. Output Power vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
1930 MHz
-45 1960 MHz
1990 MHz
-50
34
-55
-60
-65
16
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
18 20 22 24
Average Output Power (dBm)
26
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
0
-5
-10
-15
-20
-25
1.8
S11
S22
1.85
1.9 1.95
2
Frequency (GHz)
2.05 2.1
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
-40
IMD3L
IMD3U
-50
IMD5
-60
-70
-80
22
24 26 28 30
Output Power, PEP (dBm)
32
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
50
1930 MHz
40 1960 MHz
1990 MHz
30
20
10
0
18 22 26 30 34
Output Power (dBm)
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 1960 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
-50
-60
-70
-80
17
19 21 23 25
Average Output Power (dBm)
27
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 5 of 9 November 2006