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GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD Protection in SOT-23
3
12
20421
20512
MARKING (example only)
1
YYY
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
FEATURES
• Single-line ESD protection device
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
• Space saving SOT-23 package
• e3 - Sn
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE
STANDARD GREEN
TIN
PLATED
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
H
H
H
H
E
E
E
E
3
G3
3
G3
3
G3
3
G3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
-08
-08
-08
-08
-18
-18
-18
-18
ORDERING CODE
(EXAMPLE)
GSOT05-E3-08
GSOT05-G3-08
GSOT05-HE3-08
GSOT05-HG3-08
GSOT05-E3-18
GSOT05-G3-18
GSOT05-HE3-18
GSOT05-HG3-18
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
STATUS
WEIGHT
GSOT03 SOT-23
GSOT04 SOT-23
GSOT05 SOT-23
GSOT08 SOT-23
GSOT12 SOT-23
GSOT15 SOT-23
GSOT24 SOT-23
GSOT36 SOT-23
03
03G
04
04G
05
05G
08
08G
12
12G
15
15G
24
24G
36
36G
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
FLAMMABILITY
RATING
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Rev. 2.5, 02-May-17
1 Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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GSOT03 to GSOT36
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
369
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
429
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
480
± 30
± 30
-40 to +125
-55 to +150
VALUE
18
345
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
Rev. 2.5, 02-May-17
2 Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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GSOT03 to GSOT36
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
12
312
± 30
± 30
-40 to +125
-55 to +150
VALUE
8
230
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
5
235
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
3.5
248
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
Rev. 2.5, 02-May-17
3 Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
GSOT03 to GSOT36
Vishay Semiconductors
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
3
Ground
12
BiAs
20422
ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
at VR = 3.3 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VF
CD
MIN.
-
-
3.3
-
4
-
-
-
-
-
-
TYP.
-
-
-
-
4.6
5.7
10
1
4.5
420
260
MAX.
1
3.3
-
100
5.5
7.5
12.3
1.2
-
600
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
at VR = 4 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VF
CD
MIN.
-
-
4
-
5
-
-
-
-
-
-
TYP.
-
-
-
-
6.1
7.5
11.2
1
4.5
310
200
MAX.
1
4
-
20
7
9
14.3
1.2
-
450
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.5, 02-May-17
4 Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
GSOT03 to GSOT36
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 10 μA
at VR = 5 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VF
CD
MIN.
-
-
5
-
6
-
-
-
-
-
-
TYP.
-
-
-
-
6.8
7
12
1
4.5
260
150
MAX.
1
5
-
10
8
8.7
16
1.2
-
350
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL MIN.
TYP.
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Number of lines which can be protected
Max. reverse working voltage
at IR = 5 μA
at VR = 8 V
at IR = 1 mA
Nchannel
VRWM
VR
IR
VBR
-
-
8
-
9
-
-
-
-
10
Reverse clamping voltage
Forward clamping voltage
at IPP = 1 A
at IPP = IPPM = 18 A
at IPP = 1 A
at IPP = IPPM = 18 A
- 10.7
VC
- 15.2
-
VF
-
1
3
Capacitance
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
- 160
CD
- 80
MAX.
1
8
-
5
11
13
19.2
1.2
-
250
-
ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
at VR = 12 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 12 A
at IPP = 1 A
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VF
CD
MIN.
-
-
12
-
13.5
-
-
-
-
-
-
TYP.
-
-
-
-
15
15.4
21.2
1
2.2
115
50
MAX.
1
12
-
1
16.5
18.7
26
1.2
-
150
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.5, 02-May-17
5 Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000