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GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD Protection in SOT-23
21
3
20456
MARKING (example only)
20512
1
YYY
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
FEATURES
• Two-line ESD protection device
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
• Space saving SOT-23 package
• e3 - Sn
Available
• AEC-Q101 qualified available
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
NUMBER AEC-Q101
(EXAMPLE) QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE
STANDARD
GREEN
TIN
PLATED
GSOT05C-
GSOT05C-
GSOT05C-
GSOT05C-
GSOT05C-
GSOT05C-
GSOT05C-
GSOT05C-
H
H
H
H
E
E
E
E
3
G3
3
G3
3
G3
3
G3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
-08
-08
-08
-08
-18
-18
-18
-18
ORDERING CODE
(EXAMPLE)
GSOT05C-E3-08
GSOT05C-G3-08
GSOT05C-HE3-08
GSOT05C-HG3-08
GSOT05C-E3-18
GSOT05C-G3-18
GSOT05C-HE3-18
GSOT05C-HG3-18
PACKAGE DATA
DEVICE PACKAGE
NAME
NAME
GSOT03C SOT-23
GSOT04C SOT-23
GSOT05C SOT-23
GSOT08C SOT-23
GSOT12C SOT-23
GSOT15C SOT-23
GSOT24C SOT-23
GSOT36C SOT-23
TYPE
CODE
03C
C1G
04C
C8G
05C
C2G
08C
C3G
12C
C4G
15C
C5G
24C
C6G
36C
C7G
ENVIRONMENTAL
STATUS
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
WEIGHT
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
MOISTURE
SOLDERING
FLAMMABILITY SENSITIVITY LEVEL
CONDITIONS
RATING
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Rev. 2.6, 02-May-17
1 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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GSOT03C to GSOT36C
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
30
369
504
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
30
429
564
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
30
30
480
612
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
Rev. 2.6, 02-May-17
2 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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GSOT03C to GSOT36C
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
18
18
345
400
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
12
12
312
337
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
8
8
345
400
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
Rev. 2.6, 02-May-17
3 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
GSOT03C to GSOT36C
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
5
5
235
240
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
3.5
3.5
248
252
± 30
± 30
-55 to +150
-55 to +150
UNIT
A
A
W
W
kV
kV
°C
°C
Rev. 2.6, 02-May-17
4 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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GSOT03C to GSOT36C
Vishay Semiconductors
BiAs-MODE (2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to ground
and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode
between pin 2 and pin 3 and between pin 1 and pin 3 offers a high isolation to the ground line. The protection device behaves
like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
Clamping Voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
L2
21
3 BiAs
Ground
20358
If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x IPPM)
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x CD)
• double reverse leakage current (2 x IR)
L1
21
3
Ground
20359
ELECTRICAL CHARACTERISTICS GSOT03C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
at VR = 3.3 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VF
CD
MIN.
-
-
3.3
-
4.0
-
-
-
-
-
-
TYP.
-
-
-
-
4.6
5.7
10
1
4.5
420
260
MAX.
2
3.3
-
100
5.5
7.5
12.3
1.2
-
600
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.6, 02-May-17
5 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000