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VISHAY
ESD Protection Diode
GSOT03C to GSOT36C
Vishay Semiconductors
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see IPPM below
3
12
18070
• Devices have dual diodes, which can protect
two unidirectional lines with pin 3 used
as a common anode connection, or a single
bidirectional line between pins 1 and 2.
Mechanical Data
Case: SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 8 mg
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak power dissipation1)
Forward surge current
Test condition
8/20 µs pulse
8.3 ms single half sine-wave
1) Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03C, GSOT04C, the peak power dissipation is 270 W
Symbol
PPK
IFSM
Value
300
7
Unit
W
A
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Operation and storage
temperature range
Test condition
Symbol
Tstg, TJ
Value
- 55 to + 150
Unit
°C
Document Number 85824
Rev. 1, 02-Jun-03
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1

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GSOT03C to GSOT36C
Vishay Semiconductors
VISHAY
Electrical Characteristics
TJ = 25 °C unless otherwise noted
Part Number Device
Rated
Marking
Stand-off
Code
Voltage
VWM
V
GSOT03C
03C
3.3
GSOT04C
04C
4.0
GSOT05C
05C
5.0
GSOT08C
08C
8.0
GSOT12C
12C
12.0
GSOT15C
15C
15.0
GSOT24C
24C
24.0
GSOT36C
36C
36.0
1) 8/20 µs waveform used (see figure 2)
Minimum
Breakdown
Voltage
@ 1 mA
VBR
V
4.5
5.0
6.0
8.5
13.3
16.7
26.7
40
Maximum
Clamping
Voltage
@ IP = 1 A1) @ IP = 5 A1)
VC
V
7.0 9.0
8.5 10.5
9.8 12.5
13.4 15.0
19.0 28.0
24.0 35.0
43.0 60.0
60.0 75.0
Maximum
Pulse Peak
Current
tp = 8/20 µs
IPPM
A
18
17
17
15
12
10
5
2
Maximum
Leakage
Current
@ VWM
ID
µA
125
125
100
10
2
1
1
1
Maximum
Capacitance
@ 0 V, 1 MHz
C
pF
600
600
400
350
150
100
63
60
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
1000
300W, 8/20 µs waveshape
100
10
0.1
17476
1.0 10 100 1000
td - Pulse Duration ( µ s )
10000
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
100
Peak Pulse Power
8/20 µ s
80
60
40
20
0
0
17478
Average Power
25 50 75 100 125
TL - Lead Temperature °C
Figure 3. Power Derating
150
110
100
90
80
70
60
50
40
30
20
10
0
0
17477
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
td
=
IPP
2
5 10 15 20 25
t - Time ( µ s )
Figure 2. Pulse Waveform
30
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Document Number 85824
Rev. 1, 02-Jun-03

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VISHAY
Package Dimensions in Inches (mm)
.12 2 ( 3.1)
.110 (2.8)
.016 ( 0.4)
3
GSOT03C to GSOT36C
Vishay Semiconductors
Top View
12
.037( 0.95) .037( 0.95)
.016 ( 0.4) .016 ( 0.4)
.102 ( 2.6)
.094 ( 2.4)
17418
Document Number 85824
Rev. 1, 02-Jun-03
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GSOT03C to GSOT36C
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85824
Rev. 1, 02-Jun-03