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PD - 94442
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 60A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-247AC
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.24
–––
40
–––
Units
°C/W
g (oz)
1
04/26/02

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IRG4PC60F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 16 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.13 — V/°C VGE = 0V, IC = 1.0mA
— 1.5 1.8
IC = 60A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 1.7 — V IC = 90A
See Fig.2, 5
— 1.5 —
IC = 60A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
36 69 — S VCE = 100V, IC = 60A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 290 340
IC = 40A
— 40 47 nC VCC = 400V
— 100 130
VGE = 15V
See Fig. 8
— 42 —
— 66 — ns TJ = 25°C
— 310 360
IC = 60A, VCC = 480V
— 170 220
VGE = 15V, RG = 5.0
— 0.30 —
Energy losses include "tail"
— 4.6 — mJ See Fig. 10, 11, 13, 14
— 4.9 6.3
— 39 —
TJ = 150°C,
— 66 —
— 470 —
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
— 300 —
Energy losses include "tail"
— 8.8 — mJ See Fig. 13, 14
— 13 — nH Measured 5mm from package
— 6050 —
VGE = 0V
— 360 —
— 66 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = TBD µH,
RG = 5.0. (See fig. 13a)
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC60F
160
120
Square wave:
60% of rated
voltage
Triangular wave:
Ideal diodes
Clamp voltage:
80% of rated
80
40
0
0.1
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
1
f , Frequency ( kHz )
10
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
1000
100
TJ = 150°C
10
1
0.1
0.01
0.0
TJ = 25°C
1.0 2.0
VGE = 15V
20µs PULSE WIDTH
3.0 4.0 5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100 TJ = 150°C
10
1
0.1
0.01
4
TJ = 25°C
VCC = 10V
5µs PULSE WIDTH
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
11
Fig. 3 - Typical Transfer Characteristics
3

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IRG4PC60F
100
90
80
70
60
50
40
30
20
10
0
25
V GE = 15V
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 4 - Maximum Collector Current vs. Case
Temperature
3.0
VGE = 15V
80µs PULSE WIDTH
IC = 120A
2.0
IC = 60A
IC = 30A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
D = 0.50
0.1
0.20
0.01
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC60F
100000
10000
Cies
VGE = 0V, f = 1 MHZ
Cies = Cge + Cgc, Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
1000
Coes
100
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V CC = 400V
I C = 40A
15
10
5
0
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.00
7.00
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 60A
100
RG = 5.0
VGE = 15V
VCC= 480V
IC = 120A
6.00
5.00
4.00
0
10 20 30 40
RG, Gate Resistance ()
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
IC = 60A
IC = 30A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5