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STP200NF04L
STB200NF04L - STB200NF04L-1
N-CHANNEL 40V - 3 m- 120 A TO-220/D²PAK/I²PAK
STripFET™ II MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB200NF04L
STP200NF04L
STB200NF04L-1
40 V
40 V
40 V
3.5 m
3.8 m
3.8 m
s TYPICAL RDS(on) = 3m
s 100% AVALANCHE TESTED
s LOW THERESHOLD DRIVE
ID
120 A
120 A
120 A
Figure 1: Package
3
2
1
TO-220
3
1
D²PAK
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
stripbased process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less-
critical alignement steps therefore a remarkable
manufacturing reproducibility. This new improved
device has been specifically designed for Automo-
tive applications.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
123
I²PAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER
STP200NF04L
STB200NF04L
STB200NF04L-1
MARKING
P200NF04L
B200NF04L
B200NF04L
PACKAGE
TO-220
D²PAK
I²PAK
April 2005
PACKAGING
TUBE
TAPE & REEL
TUBE
Rev. 1
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STP200NF04L - STB200NF04L - STB200NF04L-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VGDR
Drain-gate Voltage (RGS=20 KΩ)
VGS Gate- source Voltage
ID (**) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)ISD 100 A, di/dt 240 A/µs, VDD 32 , Tj TJMAX
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V
(**) Current limited by Package
Value
40
40
± 16
120
120
480
300
2
3.6
1.4
-55 to 175
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-pcb (*) Thermal Resistance Junction-pcb
Max
Rthja Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
(*)When mounted on 1 inch² FR4 2oZ Cu
TO-220/I²PAK
0.50
62.5
300
D²PAK
35
--
--
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
IDSS
Zero Gate Voltage
VDS= Max Rating
Drain Current (VGS = 0) VD = Max Rating, TC= 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
14
RDS(on)
Static Drain-source On VGS = 10 V, ID = 50 A
Resistance
VGS = 5 V, ID = 50 A
TO-220
I²PAK
3.3 3.8
3.8 4.6
VGS = 10 V, ID = 50 A
VGS = 5 V, ID = 50 A
D²PAK
3.0 3.5
3.5 4.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
Unit
°C/W
°C/W
°C
Unit
V
µA
µA
nA
V
m
m
m
m
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STP200NF04L - STB200NF04L - STB200NF04L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
gfs (4) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
tf(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 20 A
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 20 V, ID = 50 A,
RG= 4.7 VGS = 4.5 V
(see Figure 16)
Vclamp = 32 V, ID = 100 A,
RG= 4.7 VGS = 4.5 V
(see Figure 17)
VDD = 32 V, ID = 100 A,
VGS = 4.5 V
(see Figure 19)
Table 7: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (4) Forward On Voltage
ISD = 160 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 100 A, di/dt = 100 A/µs,
VDD = 20 V, Tj = 150°C
(see Figure 16)
(1) Pulse width limited by safe operating area
(4). Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Min.
Typ.
60
6400
1300
190
37
270
90
80
85
125
160
72
20
28.5
Typ.
88
240
5.5
Max.
90
Max.
100
400
1.3
Unit
S
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
Unit
A
A
V
ns
nC
A
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STP200NF04L - STB200NF04L - STB200NF04L-1
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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STP200NF04L - STB200NF04L - STB200NF04L-1
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
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