ISP624-1.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 ISP624-1 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
ISP624-1X, ISP624-2X, ISP624-4X
ISP624-1, ISP624-2, ISP624-4
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
ISP624-1X
ISP624-1
2.54
Dimensions in mm
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
-STD
- G form
7.0 1
6.0 2
1.2
4
3
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP624-1 , ISP624-2 , ISP624-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
5.08
4.08 4.0
3.0
3.0
ISP624-2X 0.5
ISP624-2
2.54
0.5
3.35
7.0
6.0
7.62
0.26
1
2
3
4
13°
Max
8
7
6
5
FEATURES
1.2
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
10.16
9.16
4.0
3.0
7.62
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio ( 50% min)
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l High BVCEO ( 55Vmin )
l All electrical parameters 100% tested
3.0
0.5
3.35
0.5
0.26
1
13°
Max
16
l Low Input Current 0.5mA IF
APPLICATIONS
l Computer terminals
l Industrial systems controllers
ISP624-4X
ISP624-4
2.54
2 15
3 14
4 13
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
1.2
5
7.0 6
6.0 7
8
12
11
10
9
20.32
19.32
7.62
4.0
3.0
0.6
0.1
10.46
9.86
1.25 0.26
0.75
10.16
3.0
0.5
0.5 3.35
0.26
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92401m-AAS/A3

No Preview Available !

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
5V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
Reverse Voltage (VR)
Reverse Current (IR)
1.0 1.15 1.3 V
5V
10 µA
Output
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Emitter-collector Breakdown (BV )
ECO
Collector-emitter Dark Current (ICEO)
55
6
V
V
100 nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP624-1,ISP624-2,ISP624-4
100
50
1200 %
%
I = 10mA
F
IR = 10µA
VR = 5V
IC = 0.5mA
I
E
=
100µA
VCE = 24V
1mA IF , 0.5V VCE
0.5mA IF , 1.5V VCE
Collector-emitter Saturation VoltageVCE (SAT)
0.4 V
0.2 V
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
5300
7500
5x1010
8
8
10
8
VRMS
V
PK
µs
µs
µs
µs
1mA IF , 0.5mA IC
1mA I , 1mA I
FC
See note 1
See note 1
VIO = 500V (note 1)
VCC = 10V ,
I
C
=
2mA,
R
L
=
100
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92401m-AAS/A3

No Preview Available !

Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
2.0 TA = 25°C
150
1.6
IF = 1mA
1.2
100
0.8
50 IF = 0.5mA
0.4
0
-30
0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
60
50
40
30
0
0 0.2 0.4 0.6 0.8 1.0
Collector-emitter voltage V ( V )
CE
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5 IF = 1mA
V = 0.4V
CE
1.0
20
10
0
-30
0 25 50 75 100 125
Ambient temperature T ( °C )
A
0.5
0
-30 0 25 50 75 100
Ambient temperature T ( °C )
A
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
I = 1mA
F
0.20 IC = 0.5mA
0.16
0.12
0.08
0.04
0
-30
0 25 50 75
Ambient temperature TA ( °C )
100
7/12/00
Current Transfer Ratio vs. Forward Current
120
100
80
60
40
20
0
0.1
VT CE==205.°4CV
A
0.2
0.5 1
2
Forward current IF (mA)
5
DB92401m-AAS/A3