Z0410xF.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 Z0410xF 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
® Z0410xE/F
STANDARD TRIACS
FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
IGT 25mA
A1
A2 G
A1
A2 G
DESCRIPTION
The Z0410xE/F series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
switching and phase control applications.
TO202-1
(Plastic)
Z0410xE
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
Z0410xE/F Tc= 75 °C
Z0410xF Ta= 25 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 50 mA diG /dt = 0.1 A/µs.
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
TO202-2
(Plastic)
Z0410xF
Value
4
0.95
22
20
2
10
50
- 40, + 150
- 40, + 125
260
Unit
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
January 1995
Voltage
Unit
DM S N
400 600 700 800 V
1/6

No Preview Available !

Z0410xE/F
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Z0410xE
Rth(j-c)
Rth(j-c)
Z0410xF
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
Value
80
100
10
7.5
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III-IV MIN
tgt VD=VDRM IG = 40mA Tj= 25°C I-II-III-IV TYP
IT = 5.5A
dIG/dt = 0.5A/µs
IH * IT= 50 mA Gate open Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV TYP
II TYP
VTM * ITM= 5.5A tp= 380µs
Tj= 25°C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 110°C
MAX
MAX
dV/dt *
VD=67%VDRM
Gate open
Tj= 110°C
MIN
TYP
(dV/dt)c * (dI/dt)c = 1.8 A/ms
Tj= 110°C
MIN
* For either polarity of electrode A2 voltage with reference to electrode A1
Sensitivity
10
25
1.5
0.2
2
25
25
50
2
5
200
200
400
5
Unit
mA
V
V
µs
mA
mA
V
µA
V/µs
V/µs
ORDERING INFORMATION
Z
TRIAC TOP GLASS
CURRENT
2/6
04 10 M
SENSITIVITY
®
E
PACKAGES :
E=TO202-1 F=TO202-2
VOLTAGE

No Preview Available !

Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Z0410xE/F
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (TO202-1).
P(W)
7
6
5
180 O
o
= 180
o
= 120
4
o
= 90
3
o
= 60
2o
= 30
1
0
012
I T(RMS) (A)
34
Fig.3 : Maximum RMS power dissipation versus
RMS on-state current.
P(W)
7
6
5
4
3
180 O
o
= 180
o
= 120
o
= 90
o
= 60
2o
= 30
1
0
012
I T(RMS) (A)
34
P (W)
7
6
5
4
3
2
1
Tamb (oC)
0
0 20 40
60
Tcase (oC)
Rth = 0 o C/W
5o C/W
10 o C/W
15 o C/W
-75
-85
-95
-105
-115
-125
80 100 120 140
Fig.4 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) (TO202-2).
P (W)
7
6
5
Rth(j-c)
Tcase (oC)
-75
-85
4 -95
3
-105
2
1 Rth(j-a)
-115
Tamb (oC)
0 -125
0 20 40 60 80 100 120 140
Fig.5 : RMS on-state current versus case tempera-
ture (TO202-1).
I T(RMS)(A)
5
4
3
= 180o
2
1
Tcas e(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
®
Fig.6 : RMS on-state current versus case tempera-
ture (TO202-2).
I T(RMS)(A)
1
0.8
0.6
= 180o
0.4
0.2
Tamb (oC )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
3/6