CPH5905.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 CPH5905 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
Ordering number : ENN7177
CPH5905
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
CPH5905
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly.
The CPH5905 contains a 2SK3557-equivalent chip
and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
Package Dimensions
unit : mm
2196
2.9
54
3
[CPH5905]
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Marking : 1E
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1
0.95
2
0.4
0.4
Conditions
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Ratings
Unit
15 V
--15 V
10 mA
50 mA
200 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
300
150
--55 to +150
mW
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22802 TS IM TA-3495 No.7177-1/5

No Preview Available !

CPH5905
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1k, ID=1mA, f=1kHz
Collector Cutoff Current
ICBO
VCB=35V, IE=0
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE VCE=6V, IC=1mA
Gain-Bandwidth Product
fT VCE=6V, IC=10mA
Output Capacitance
Cob VCB=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, RBE=
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
Turn-ON Time
ton See specified Test Circuit.
Storage Time
tstg See specified Test Circuit.
Fall Time
tf See specified Test Circuit.
* : The CPH5905 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or a transistor.
Ratings
min typ max
Unit
--15
--0.4
10.0*
24
--0.7
35
10.0
2.9
1.0
--1.0
--1.5
32.0*
V
nA
V
mA
mS
pF
pF
dB
0.1 µA
0.1 µA
135 400
200 MHz
1.7 pF
0.08
0.4 V
0.8 1.0 V
55 V
50 V
6V
0.15
µs
0.75
µs
0.20
µs
Electrical Connection (Top view)
B E/D S
CG
Switching Time Test Circuit
PC=20µs
D.C.1%
IB1
IB2
INPUT
50
1k
VR
+
220µF
VBE= --5V
10IB1= --10IB2=IC=10mA
OUTPUT
RL
2k
+
470µF
VCC=20V
ID -- VDS
[FET]
20
16
VGS=0
12 --0.1V
8 --0.2V
--0.3V
4 --0.4V
--0.7V --0.6V --0.5V
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Drain-to-Source Voltage, VDS -- V ITR02749
ID -- VDS
[FET]
20
VGS=0
16
--0.1V
12
--0.2V
8 --0.3V
--0.4V
4
--0.5V
--0.7V
--0.6V
0
0 2 4 6 8 10 12
Drain-to-Source Voltage, VDS -- V ITR02750
No.7177-2/5

No Preview Available !

CPH5905
22
VDS=5V
20
18
16
ID -- VGS
[FET]
16
VDS=5V
14 IDSS=15mA
12
ID -- VGS
[FET]
14 10
12
8
10
86
6
4
2
0
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2
0
0.2
Gate-to-Source Voltage, VGS -- V
yfs-- ID
7
VDS=5V
IT04224
[FET]
5 f=1kHz
30mA
3 I DSS=15mA
2
4
2
0
--1.2
100
7
--1.0 --0.8 --0.6 --0.4 --0.2
0
0.2
Gate-to-Source Voltage, VGS -- V ITR02752
yfs-- IDSS
[FET]
VDS=5V
VGS=0
f=1kHz
5
10
7
5
3
2
3 5 7 1.0
23
5 7 10
23 5
Drain Current, ID -- mA
IT04225
3
VGS(off) -- IDSS
[FET]
VDS=5V
ID=100µA
2
3
2
10
7 10
23
5
Drain Current, IDSS -- mA
IT04226
3
Ciss -- VDS
[FET]
VGS=0
f=1MHz
2
1.0
7
5
3
7 10
23
5
Drain Current, IDSS -- mA
IT04227
10
Crss -- VDS
[FET]
VDS=0
f=1MHz
7
5
3
2
1.0
7
5
7 1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V IT04229
10
7
5
3
7 1.0
10
8
23
5 7 10
Drain-to-Source Voltage, VDS -- V
NF -- f
23
IT04228
[FET]
VDS=5V
ID=1mA
Rg=1k
6
4
2
0
0.01 2 3
5 7 0.1
2 3 5 7 1.0 2 3 5 7 10
Frequency, f -- kHz
2 3 5 7100
ITR02758
No.7177-3/5

No Preview Available !

CPH5905
NF -- Rg
[FET]
PD -- Ta
[FET]
10 240
VDS=5V
ID=1mA
f=1kHz
200
8
160
6
120
4
80
2
40
0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000
Signal Source Resistance, Rg -- kITR02759
IC -- VCE
[TR]
50
450µA 400µA
350µA
45
300µA
40 250µA
35 200µA
30
150µA
25
20 100µA
15
10 50µA
5
0 IB=0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V ITR10376
IC -- VBE
[TR]
160
VCE=6V
140
120
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V ITR10378
fT -- IC
[TR]
7
VCE=6V
5
3
2
100
7
5
3
2
1.0
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC -- mA
ITR10380
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR02760
IC -- VCE
[TR]
12
10 50µA
45µA
8 40µA
35µA
6 30µA
25µA
20µA
4
15µA
2 10µA
5µA
0 IB=0
0 5 10 15 20 25 30 35 40 45 50
Collector-to-Emitter Voltage, VCE -- V ITR10377
hFE -- IC
[TR]
2
VCE=6V
1000
7
5
3
2
100
7
5
Ta=75°C
25°C
--25°C
3
0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2 3
Collector Current, IC -- mA
ITR10379
Cib -- VEB
[TR]
5
f=1MHz
3
2
10
7
5
3
2
1.0
5 7 1.0
23
5 7 10
Emitter-to-Base Voltage, VEB -- V ITR10381
No.7177-4/5

No Preview Available !

CPH5905
Cob -- VCB
[TR]
5
f=1MHz
3
2
10
7
5
3
2
1.0
7
5
5 7 1.0
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR10382
VBE(sat) -- IC
[TR]
10
IC / IB=10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1.0
250
200
VCE(sat) -- IC
[TR]
IC / IB=10
Ta=75°C
--25°C
25°C
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC -- mA
ITR10383
PC -- Ta
[TR]
3
150
2
1.0
7
5
3
1.0
Ta= --25°C
75°C
25°C
23
5 7 10
23
5 7 100
2
Collector Current, IC -- mA
ITR10384
100
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR10385
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
PS No.7177-5/5