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Ordering number : ENN7177
CPH5905
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
CPH5905
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly.
The CPH5905 contains a 2SK3557-equivalent chip
and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
Package Dimensions
unit : mm
2196
2.9
54
3
[CPH5905]
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Marking : 1E
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1
0.95
2
0.4
0.4
Conditions
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Ratings
Unit
15 V
--15 V
10 mA
50 mA
200 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
300
150
--55 to +150
mW
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22802 TS IM TA-3495 No.7177-1/5

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CPH5905
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1k, ID=1mA, f=1kHz
Collector Cutoff Current
ICBO
VCB=35V, IE=0
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE VCE=6V, IC=1mA
Gain-Bandwidth Product
fT VCE=6V, IC=10mA
Output Capacitance
Cob VCB=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, RBE=
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
Turn-ON Time
ton See specified Test Circuit.
Storage Time
tstg See specified Test Circuit.
Fall Time
tf See specified Test Circuit.
* : The CPH5905 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or a transistor.
Ratings
min typ max
Unit
--15
--0.4
10.0*
24
--0.7
35
10.0
2.9
1.0
--1.0
--1.5
32.0*
V
nA
V
mA
mS
pF
pF
dB
0.1 µA
0.1 µA
135 400
200 MHz
1.7 pF
0.08
0.4 V
0.8 1.0 V
55 V
50 V
6V
0.15
µs
0.75
µs
0.20
µs
Electrical Connection (Top view)
B E/D S
CG
Switching Time Test Circuit
PC=20µs
D.C.1%
IB1
IB2
INPUT
50
1k
VR
+
220µF
VBE= --5V
10IB1= --10IB2=IC=10mA
OUTPUT
RL
2k
+
470µF
VCC=20V
ID -- VDS
[FET]
20
16
VGS=0
12 --0.1V
8 --0.2V
--0.3V
4 --0.4V
--0.7V --0.6V --0.5V
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Drain-to-Source Voltage, VDS -- V ITR02749
ID -- VDS
[FET]
20
VGS=0
16
--0.1V
12
--0.2V
8 --0.3V
--0.4V
4
--0.5V
--0.7V
--0.6V
0
0 2 4 6 8 10 12
Drain-to-Source Voltage, VDS -- V ITR02750
No.7177-2/5

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CPH5905
22
VDS=5V
20
18
16
ID -- VGS
[FET]
16
VDS=5V
14 IDSS=15mA
12
ID -- VGS
[FET]
14 10
12
8
10
86
6
4
2
0
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2
0
0.2
Gate-to-Source Voltage, VGS -- V
yfs-- ID
7
VDS=5V
IT04224
[FET]
5 f=1kHz
30mA
3 I DSS=15mA
2
4
2
0
--1.2
100
7
--1.0 --0.8 --0.6 --0.4 --0.2
0
0.2
Gate-to-Source Voltage, VGS -- V ITR02752
yfs-- IDSS
[FET]
VDS=5V
VGS=0
f=1kHz
5
10
7
5
3
2
3 5 7 1.0
23
5 7 10
23 5
Drain Current, ID -- mA
IT04225
3
VGS(off) -- IDSS
[FET]
VDS=5V
ID=100µA
2
3
2
10
7 10
23
5
Drain Current, IDSS -- mA
IT04226
3
Ciss -- VDS
[FET]
VGS=0
f=1MHz
2
1.0
7
5
3
7 10
23
5
Drain Current, IDSS -- mA
IT04227
10
Crss -- VDS
[FET]
VDS=0
f=1MHz
7
5
3
2
1.0
7
5
7 1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V IT04229
10
7
5
3
7 1.0
10
8
23
5 7 10
Drain-to-Source Voltage, VDS -- V
NF -- f
23
IT04228
[FET]
VDS=5V
ID=1mA
Rg=1k
6
4
2
0
0.01 2 3
5 7 0.1
2 3 5 7 1.0 2 3 5 7 10
Frequency, f -- kHz
2 3 5 7100
ITR02758
No.7177-3/5