SSM6K08FU.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 SSM6K08FU 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
SSM6K08FU
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K08FU
High Speed Switching Applications
· Small package
· Low on resistance: Ron = 105 m(max) (@VGS = 4 V)
Ron = 140 m(max) (@VGS = 2.5 V)
· High-speed switching: ton = 16 ns (typ.)
toff = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
(Note1)
Tch
Tstg
20
±12
1.6
3.2
300
150
-55~150
V
V
A
mW
°C
°C
Note1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6) Figure 1.
Marking
Circuit (top view)
654
Equivalent
654
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
KDC
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1 2002-01-24

No Preview Available !

SSM6K08FU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min
IGSS
V (BR) DSS
V (BR) DSX
IDSS
Vth
½Yfs½
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = ±12 V, VDS = 0
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = -12 V
VDS = 20 V, VGS = 0
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 0.8 A
(Note2)
ID = 0.8 A, VGS = 4 V
(Note2)
ID = 0.8 A, VGS = 2.5 V
(Note2)
ID = 0.8 A, VGS = 2.0 V
(Note2)
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, ID = 0.8 A,
VGS = 0~2.5 V, RG = 4.7 W
¾
20
12
¾
0.5
2.0
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
¾
¾
¾
77
100
125
306
44
74
16
15
Max
±1
¾
¾
1
1.2
¾
105
140
210
¾
¾
¾
¾
¾
Unit
mA
V
mA
V
S
mW
pF
pF
pF
ns
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
IN
0
10 ms
VDD = 10 V
RG = 4.7 W
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
VDD (c) VOUT
2.5 V
0V
VDD
VDS (ON)
90%
10%
10%
90%
tr
tf
ton toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on
this product.
2 2002-01-24

No Preview Available !

ID – VDS
4
Common Source
4 V 2.5 V 2.0 V
3
Ta = 25°C
1.7 V
2
1.6 V
1 1.5 V
1.4 V
VGS = 1.3 V
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
SSM6K08FU
10000
1000
VDS = 3 V
Common Source
ID – VGS
Ta = 100°C
100
25°C
10 -25°C
1
0.1
0.01
0
0.4 0.8 1.2 1.6
Gate-Source voltage VGS (V)
2
RDS (ON) – ID
200
Common Source
Ta = 25°C
160
VGS = 2.0 V
120 2.5 V
4.0 V
80
40
0
0123
Drain current ID (A)
400
ID = 0.8 A
RDS (ON) – Ta
Common Source
300
200
VGS = 2.0 V
2.5 V
4V
100
0
-25 0 25 50 75 100 125 150
Ambient temperature Ta (°C)
400
ID = 0.8 A
RDS (ON) – VGS
Common Source
300
200
25°C
100
-25°C
Ta = 100°C
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
12
4
Common Source
IDR – VDS
VGS = 0
Ta = 25°C
3
G
D
IDR
S
2
1
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Drain-Source voltage VDS (V)
3 2002-01-24