OP58TS.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 OP58TS 데이타시트 다운로드

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Spec. No. : ODT-W010-82(0)
Issued Date : 2004.09.20
SPECIFICATION
MODEL NAME : Photo Diode
MODEL NO. : OP58TS
Prepared by :
Checked by :
Approved by :
ODTech
Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea
Tel : 82-63-263-7626, Fax : 82-63-262-7624
Jeonju office : Tel : 82-63-214-2112, Fax : 82-63-214-2113
E-mail : kgbb@od-tech.com
Opto-Device Technology
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Photo Diode
Description
The OP58TS is a high speed, high output pin photo diode,
mounted in a low-cost PCB package.
Features
High output power
High-speed response
Easy to mount on PCB
Low dark current
Applications
Fiber optic communication
Optical switches
Absolute Maximum Ratings
OP58TS
(Ta= 25)
Parameter
Symbol
Reverse Breakdown Voltage
BVR
Junction Temperature
Operating Temperature
TJ
TOPR
Storage Temperature
TSTG
Electro-Optical Characteristics
Ratings
30
150
-20 ~ 80
-30 ~ 90
Unit
V
(Ta=25)
Parameter
Symbol
Conditions
Open Circuit Voltage
Voc Ev=1,000lux *1
Short Circuit Current
ISC Ev=1,000lux *1
ISC Condition*2
Dark Current
ID VR=5V
Capacitance
Ct f=1MHz
Temp. Coefficient of Voc
αt
Temp. Coefficient of Isc
βt
Spectrum Sensitivity
λ
Peak Sensing Wavelength
λp
Reverse Breakdown Voltage
Half Angle
BVR
ΔΘ
Ir=10
*1 : Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K
*2 : Light source : Laser Diode (λ=780nm), IF=20, Distance = 30mm
Opto-Device Technology
Min
0.35
19
-
-
-
-
-
450
-
30
-
Typ
0.38
30.5
4
22
-2.2
0.18
-
940
70
±60
Max
-
-
-
100
-
-
-
1100
-
-
-
Unit
V
/
%/
nm
nm
V
Deg.
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Photo Diode
Typical electrical / Optical characteristic curves (Ta=25)
OP58TS
0 100Lux
200Lux
300Lux
10 400Lux
500Lux
20
1000Lux
30
10²
10¹
100
40
0
0.1 0.2 0.3 0.4 0.5
VF Forward voltage [v]
Fig.1 Light current vs. Forward voltage
10-1
10¹ 10² 10³ 10
EV - Illuminance [Lux]
Fig.2 Short Current vs. Illuminance
100
10-1
10-2
10-3
-20 0 20 40 60 80 100
Ta Ambient Temperature []
Fig.3 Dark current vs. Ambient temperature
Angle (deg.)
10
20
30
40
50
60
70
0 -10
-20
-30
-40
-50
-60
-70
80 -80
90 -90
100 50 0 50 100
Po Relative radiant Intensity [%]
Fig.5 Radiant Pattern
100
80
60
40
20
0
400 500 600 700 800 900 1000 1100
λ Wavelength [nm]
Fig.4 Relative spectral sensitivity vs.
Wavelength
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Photo Diode
Lot number
The first five digits number shows lot number.
The lot number is composed of the following characters;
□□□□□-□□□□
Process number
Day ( 01,02,,29,30,31 )
Month ( 1,2,3.9,A,B,C )
Year ( 03,04,10 )
OP58TS
Cleaning
When washing is required, isopropyl alcohol should be used.
The influence of ultrasonic cleaning on the optical detectors differs depending on factors such
as oscillator output and how the optical detectors are mounted. Before cleaning by ultrasonic
wave, testing should be performed to ensure this will not cause damage to the optical detectors.
Storage
The optical detectors should be stored at 30or less and 70%R.H or less after being shipped
from ODTech and the storage life limits are 3 months. If the optical detectors are stored for 3
months or more, they can be stored for a year in a sealed container with a nitrogen atmosphere
and moisture absorbent material.
ODTech optical detectors leads are comprised of a gold plated iron alloy. The gold surface may
be affected by environments which contain corrosive gases and so on. Please avoid conditions
which may cause the device to corrode, tarnish or discolor. This corrosion or discoloration may
cause difficulty during soldering operations. It is recommended that the optical devices be used
as soon as possible.
Please avoid rapid transitions in ambient temperature, especially, in high humidity environments
where condensation can occur.
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Photo Diode
Outline Dimensions
OP58TS
(Unit : mm)
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