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STGB14NC60KDT4,
STGF14NC60KD, STGP14NC60KD
14 A, 600 V short-circuit rugged IGBT
Datasheet - production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220FP
TO-220
3
12
Figure 1: Internal schematic diagram
Features
Low on voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross-conduction
susceptibility)
Very soft ultrafast recovery antiparallel diode
Short-circuit withstand time 10 μs
Applications
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drives
Description
These devices are very fast IGBTs developed
using advanced PowerMESH™ technology. This
process guarantees an excellent trade-off
between switching performance and low on-state
behavior.
Order code
STGB14NC60KDT4
STGF14NC60KD
STGP14NC60KD
Table 1: Device summary
Marking
Package
GB14NC60KD
D²PAK
GF14NC60KD
TO-220FP
GP14NC60KD
TO-220
Packing
Tape and reel
Tube
July 2017
DocID11424 Rev 8
This is information on a product in full production.
1/26
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Contents
Contents
STGB14NC60KDT4, STGF14NC60KD,
STGP14NC60KD
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 7
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D2PAK (TO-263) type A package information ................................. 11
4.2 D²PAK (TO-263) type B package information ................................. 14
4.3 D²PAK (TO-263) type A packing information .................................. 17
4.4 D²PAK (TO-263) type B packing information .................................. 19
4.5 TO-220FP package information ...................................................... 21
4.6 TO-220 type A package information................................................ 23
5 Revision history ............................................................................ 25
2/26 DocID11424 Rev 8

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STGB14NC60KDT4, STGF14NC60KD,
STGP14NC60KD
Electrical ratings
1 Electrical ratings
Symbol
VCES
IC(1)
ICL(2)
ICP(3)
VGE
IF
IFSM
PTOT
VISO
tscw
Tstg
TJ
Table 2: Absolute maximum ratings
Parameter
Value
D²PAK, TO-220 TO-220FP
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
600
25
11
Continuous collector current at TC = 100 °C
14 7
Turn-off latching current
50
Pulsed collector current
50
Gate-emitter voltage
±20
Diode RMS forward current at TC=25°C
Surge non repetitive forward current tp = 10 ms
sinusoidal
20
55
Total dissipation at TC = 25 °C
80 28
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)
Short-circuit withstand time VCE = 300 V,
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
Storage temperature range
Operating junction temperature range
2500
10
- 55 to 150
Unit
V
A
A
A
A
V
A
A
W
V
μs
°C
Notes:
(1)Calculated according to the iterative formula:
(2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C.
(3)Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Symbol
Rthj-case
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Value
D²PAK, TO-220 TO-220FP
Thermal resistance junction-case IGBT
1.56 4.5
Thermal resistance junction-case diode
2.2 5.6
Thermal resistance junction-ambient
62.5
Unit
°C/W
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Electrical characteristics
STGB14NC60KDT4, STGF14NC60KD,
STGP14NC60KD
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Symbol
Parameter
Table 4: Static characteristics
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
IC = 1 mA, VGE = 0 V
VCE(sat)
Collector-emitter saturation
voltage
VGE(th) Gate threshold voltage
ICES Collector cut-off current
IGES
Gate-emitter leakage
current
VGE =15 V, IC = 7 A
VGE = 15 V, IC = 7 A,
Tj= 125 °C
VCE = VGE, IC = 250 µA
VCE = 600 V, VGE = 0 V
VCE=600 V, VGE = 0 V,
Tj = 125 °C (1)
VCE = 0 V, VGE = ±20 V
gfs(2) Forward transconductance VCE = 15 V, IC= 7 A
Min. Typ. Max. Unit
600 V
2.1 2.5
1.8
V
4.5 6.5 V
150 µA
1 mA
±100 nA
3.2 S
Notes:
(1)Defined by design, not subject to production test.
(2)Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Cies Input capacitance
Coes Output capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Cres Reverse transfer capacitance
Qg Total gate charge
Qge Gate-emitter charge
Qgc Gate-collector charge
VCE = 390 V, IC = 7 A,
VGE = 0 to 15 V
(see Figure 19: " Gate
charge test circuit")
Min. Typ. Max. Unit
- 760 -
- 86 - pF
- 15.5 -
- 34.4 -
- 8.1 - nC
- 16.4 -
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STGB14NC60KDT4, STGF14NC60KD,
STGP14NC60KD
Electrical characteristics
Table 6: Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
VCC = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
(see Figure 18: " Test circuit for
inductive load switching" and
Figure 20: " Switching
waveform")
- 22.5 -
- 8.5 -
ns
ns
- 700 - A/µs
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
VCC = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V,
Tj=125°C
(see Figure 18: " Test circuit for
inductive load switching" and
Figure 20: " Switching
waveform")
- 22 -
- 9.5 -
ns
ns
- 680 - A/µs
tr(Voff)
td(off)
Off voltage rise time
Turn-off delay time
tf Current fall time
VCC = 390 V, IC = 7 A,
RG = 10 Ω, VGE = 15 V
(see Figure 18: " Test circuit for
inductive load switching" and
Figure 20: " Switching
waveform")
- 60 -
- 116 -
- 75 -
ns
ns
ns
tr(Voff)
td(off)
Off voltage rise time
Turn-off delay time
tf Current fall time
VCC = 390 V, IC = 7 A,
RG = 10 Ω, VGE = 15 V,
Tj=125 °C
(see Figure 18: " Test circuit for
inductive load switching"and
Figure 20: " Switching
waveform")
- 24 -
- 196 -
- 144 -
ns
ns
ns
Symbol
Table 7: Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Turn-on switching
energy
VCC = 390 V, IC = 7 A, RG = 10 Ω, - 82 -
Eoff(2)
Turn-off switching
energy
VGE = 15 V
(see Figure 18: " Test circuit for
inductive load switching")
- 155 -
Ets Total switching energy
- 237 -
Eon(1)
Turn-on switching
energy
VCC = 390 V, IC = 7 A, RG = 10 Ω, - 131 -
Eoff(2)
Turn-off switching
energy
VGE = 15 V, Tj=125 °C
(see Figure 18: " Test circuit for
inductive load switching")
- 370 -
Ets Total switching energy
- 501 -
μJ
μJ
μJ
μJ
μJ
μJ
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
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