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New Product
DG2711
Vishay Siliconix
Low-Voltage, Sub-Ohm, SPDT Analog Switch
FEATURES
BENEFITS
D Low Voltage Operation (1.6 V to 3.6 V)
D Low On-Resistance - rDS(on): 0.44 W Typ.
D Fast Switching - tON : 25 ns, tOFF: 14 ns
D Low Leakage
D TTL/CMOS Compatible
D 6-Pin SC-70 Package
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Reduce Board Space
APPLICATIONS
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
DESCRIPTION
The DG2711 is a sub-ohm single-pole/double-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, high speed (tON: 25 ns, tOFF: 14 ns), low on-resistance
(rDS(on): 0.44 W) and small physical size (SC70), the DG2711
is ideal for portable and battery powered applications requiring
high performance and efficient use of board space.
The DG2711 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG2711.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
the lead (Pb)-free device terminations. For analog switching
products manufactured with 100% matte tin device
terminations, the lead (Pb)-free “—E3” suffix is being used as
a designator.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN
V+
GND
1
2
3
SC-70
6 NO (Source1)
5 COM
4 NC (Source2)
Top View
Device Marking: E8xx
Logic
0
1
TRUTH TABLE
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
SC70-6
Part Number
DG2711DL-T1—E3
Document Number: 73200
S-42089—Rev. A, 15-Nov-04
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DG2711
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +4 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "200 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/_C above 70_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Analog Switch
Analog Signal Ranged
On-Resistance
Switch Off Leakage Currentf
Channel-On Leakage Currentf
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitanced
Input Currentf
Dynamic Characteristics
Turn-On Timed
Turn-Off Timed
Break-Before-Make Timed
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Symbol
VNO, VNC,
VCOM
rON
INO(off),
INC(off)
ICOM(off)
ICOM(on)
VINH
VINL
Cin
IINL or IINH
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off),
CNC(off)
CON
Test Conditions
Otherwise Unless Specified
V+ = 1.8 V, "10%, VIN = 0.4 or 1.0 Ve
V+ = 1.8 V, VCOM = 0.9 V, INO, INC = 100 mA
V+ = 2.2 V
VNO, VNC = 0.2 V/2.0 V, VCOM = 2.0 V/0.2 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2.0 V
VIN = 0 or V+
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Figures 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Tempa
Limits
40 to 85_C
Minb Typc Maxb
Full
Room
Full
Room
Fulld
Room
Fulld
Room
Fulld
0
1
10
1
10
1
10
0.8
V+
2.0
2.5
1
10
1
10
1
10
Full 1.0
Full 0.4
Full 5
Full 1
1
Room
Fulld
Room
Fulld
Room
Room
Room
Room
Room
Room
3
36 60
62
22 42
44
20
56
56
73
167
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
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Document Number: 73200
S-42089—Rev. A, 15-Nov-04

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New Product
DG2711
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve
Tempa
Limits
40 to 85_C
Minb Typc Maxb
Analog Signal Ranged
On-Resistance
rON Flatness
rON Match
Switch Off Leakage Current
Channel-On Leakage Current
VNO, VNC,
VCOM
rON
rON
Flatness
DrON
INO(off),
INC(off)
ICOM(off)
ICOM(on)
V+ = 2.7 V, VCOM = 1.5 V, INO
INC = 100 mA
V+ = 2.7 V, VCOM = 0.6 V, 1.5 V, INO
INC = 100 mA
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 100 mA
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
0
1
10
1
10
1
10
0.44
0.14
V+
0.6
0.7
0.2
0.07
1
10
1
10
1
10
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitanced
Input Currentf
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
VIN = 0 or V+
Full 1.4
Full 0.5
Full 5
Full 1
1
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Power Supply
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off),
CNC(off)
CON
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Figure 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
1
25 46
48
14 38
40
28
56
56
70
163
Power Supply Range
Power Supply Current
V+
I+
V+ = 3.6 V, VIN = 0 or V+
1.6 3.6
0.01
1.0
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 3-V leakage testing, not production tested.
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
V
mA
Document Number: 73200
S-42089—Rev. A, 15-Nov-04
www.vishay.com
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DG2711
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Single Supply Voltage
1.50
1.25
T = 25_C
IS = 100 mA
1.00
0.75
V+ = 1.6 V
V+ = 1.8 V
V+ = 2.0 V
V+ = 2.5 V
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.3 V
V+ = 3.6 V
0.50
0.25
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10000
1000
VCOM Analog Voltage (V)
Supply Current vs. Temperature
V+ = 3 V
VIN = 0 V
100
10
1
60 40 20
0 20 40
Temperature (_C)
60
80 100
rON vs. Analog Voltage and Temperature
0.8
V+ = 3.0 V
0.7 IS = 100 mA
0.6
0.5
85_C
25_C
40_C
0.4
0.3
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCOM Analog Voltage (V)
Supply Current vs. Input Switching Frequency
100 m
10 m
V+ = 3 V
1m
100 m
10 m
1m
100 n
10 n
1n
10
100 1 K 10 K 100 K 1 M
Input Switching Frequency (Hz)
10 M
1000
Leakage Current vs. Temperature
V+ = 3.3 V
ICOM(on)
100
ICOM(off)
10
INO(off)/INC(off)
1
0.1
60 40 20
0 20 40
Temperature (_C)
60
80 100
300
250
200
150
100
50
0
50
100
150
200
250
300
0.00
Leakage vs. Analog Voltage
V+ = 3.3 V
ICOM(off)
INO(off)/INC(off)
ICOM(on)
0.55
1.10 1.65 2.20 2.75
VCOM, VNO, VNC Analog Voltage
3.30
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Document Number: 73200
S-42089—Rev. A, 15-Nov-04

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New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
DG2711
Vishay Siliconix
Switching Time vs. Temperature
40
tON V+ = 1.8 V
35
tON V+ = 2.0 V
30
tON V+ = 3.0 V
25
20 tOFF V+ = 2.0 V
15
tOFF V+ = 1.8 V
tOFF V+ = 3.0 V
10
5
0
60 40 20
0
20 40 60 80 100
Temperature (_C)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10
0
LOSS
10
20 XTALK
30 OIRR
40
50
60 V+ = 3 V
RL = 50 W
70
80
90
100 K
1M
10 M
100 M
Frequency (Hz)
1G
Switching Threshold vs. Supply Voltage
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.0 1.5 2.0 2.5 3.0 3.5 4.0
V+ Supply Voltage (V)
240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
Charge Injection vs. Analog Voltage
V+ = 3 V
V+ = 1.8 V
0.5 1.0 1.5 2.0
VCOM Analog Voltage (v)
2.5
3.0
Document Number: 73200
S-42089—Rev. A, 15-Nov-04
www.vishay.com
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