YA846C04B.pdf 데이터시트 (총 12 페이지) - 파일 다운로드 YA846C04B 데이타시트 다운로드

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S P E C I F I C AT I O N
Device Name SILICON DIODE
Model Name Schottky Barrier Diode
Type Name YA846C04B
Spec. No.
MS5D1917
DATE
DRAWN SEP.-05-03
CHECKED SEP.-05-03
SEP.-05-03
NAME
APPROVED
Fuji Electric Co.,Ltd.
Matsumoto Factory
Fuji Electric Co.,Ltd.
MS5D1917
1/12
H04-004-07

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Revised Records
Date
Classi-
fication
Ind.
SEP.-05
-2003
Enactment ―
Content
――――――
Applied
date
Drawn
Issued
date
―――
Checked
Approved
Fuji Electric Co.,Ltd.
MS5D1917
2/12
H04-004-06

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1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
YA846C04B
2. OUT VIEW, MARKING, MOLDING RESIN, CHARACTERISTICS
(1)Out view is shown MS5D1917 9/12
(2)Marking is shown MS5D1917 9/12
It is marked to type name or abbreviated type name, polarity and Lot No.
(3)Molding resin
Epoxy resin UL : V-0
(4)Characteristics is shown MS5D1917 10/12~12/12
3. RATINGS
3.1 MAXIMUM RATINGS (at Tc=25℃ unless otherwise specified.)
ITEM
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
SYMBOL
VRSM
VRRM
Io
IFSM
Tj
Tstg
CONDITIONS
tw=500ns,duty=1/40
Square wave duty =1/2
Tc= 98 ℃
Sine wave, 10ms 1shot
RATINGS
45
45
30*
200
150
-40~+150
* Out put current of center tap full wave connection.
**Rating per element
3.2 ELECTRICAL CHARACTERISTICS (at Tc=25℃ unless otherwise specified.)
ITEM
Forward voltage ***
Reverse current ***
Thermal resistance
SYMBOL
VF
IR
Rth(j-c)
CONDITIONS
IF= 12.5A
VR=VRRM
Junction to case
MAXIMUM
0.55
1.0
2.0
***Rating per element
3.3 MECHANICAL CHARACTERISTICS
Mounting torque
Approximate mass
Recommended torque
0.3~0.5
2.0
UNITS
V
V
A
A
UNITS
V
mA
℃/W
N・m
g
Fuji Electric Co.,Ltd.
MS5D1917
3/12
H04-004-03