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® STPS10150CT/CG
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
2x5A
150 V
175°C
0.75 V
FEATURES AND BENEFITS
s HIGH JUNCTION TEMPERATURE CAPABILITY
s GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
s LOW LEAKAGE CURRENT
s AVALANCHE CAPABILITY SPECIFIED
A1
K
A2
K
A2
A1
D2PAK
STPS10150CG
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Sup-
plies.
A2
A1K
TO-220AB
STPS10150CT
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current TO-220AB
δ = 0.5
D2PAK
Tc = 155°C per diode
per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Tstg Storage temperature range
Tj Maximum operating junction temperature
dV/dt Critical rate of rise of reverse voltage
Value
Unit
150 V
10 A
5A
10
120 A
3100
W
- 65 to + 175 °C
175 °C
10000
V/µs
July 2003 - Ed: 5B
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STPS10150CT/CG
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
TO-220AB / D2PAK
TO-220AB / D2PAK
TO-220AB / D2PAK
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
4
2.4
0.7
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF ** Forward voltage drop
Tj = 25°C
IF = 5 A
Tj = 125°C
Tj = 25°C
IF = 5 A
IF = 10 A
Tj = 125°C IF = 10 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.65 IF(AV) + 0.02 IF2(RMS)
Min.
Typ.
0.40
0.69
0.79
Max.
2.0
2.0
0.92
0.75
1
0.85
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
5.0
4.5
δ = 0.1 δ = 0.2
δ = 0.5
4.0 δ = 0.05
3.5
3.0
δ=1
2.5
2.0
1.5 T
1.0
0.5
0.0
IF(av) (A)
δ=tp/T
tp
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
6
5
4
3
2
T
1
δ=tp/T
0
0 25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
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STPS10150CT/CG
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100 1000
0
Tj(°C)
25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
80
70
60
50
40
30
20
IM
10
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
50 75 100 125 150
C(pF)
200
100
50
20
10
12
F=1MHz
Tj=25°C
VR(V)
5 10 20
50 100 200
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STPS10150CT/CG
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=125°C
Typical values
10.0
Tj=125°C
1.0
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0246
S(cm²)
8 10 12 14 16 18 20
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L2
F2
F1
F
G1
G
L5
L6
L9
L4
4/5
REF.
A
C
L7
D
M
E
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
1.23 1.32 0.048 0.051
2.40 2.72 0.094 0.107
0.49 0.70 0.019 0.027
0.61 0.88 0.024 0.034
1.14 1.70 0.044 0.066
1.14 1.70 0.044 0.066
4.95 5.15 0.194 0.202
2.40 2.70 0.094 0.106
10 10.40 0.393 0.409
16.4 typ.
0.645 typ.
13 14 0.511 0.551
2.65 2.95 0.104 0.116
15.25 15.75 0.600 0.620
6.20 6.60 0.244 0.259
3.50 3.93 0.137 0.154
2.6 typ.
0.102 typ.
3.75 3.85 0.147 0.151

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PACKAGE MECHANICAL DATA
D2PAK
E
L2
A
C2
L
L3
D
A1
B2
B
C
G
2.0 MIN.
FLAT ZONE
A2
R
V2
FOOT PRINT DIMENSIONS (in millimeters)
16.90
STPS10150CT/CG
DIMENSIONS
REF. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30
4.60 0.169
0.181
A1 2.49
2.69 0.098
0.106
A2 0.03
0.23 0.001
0.009
B 0.70
0.93 0.027
0.037
B2 1.25 1.40
0.049 0.055
C 0.45
0.60 0.017
0.024
C2 1.21
1.36 0.047
0.054
D 8.95
9.35 0.352
0.368
E 10.00
10.28 0.393
0.405
G 4.88
5.28 0.192
0.208
L 15.00
15.85 0.590
0.624
L2 1.27
1.40 0.050
0.055
L3 1.40
1.75 0.055
0.069
R 0.40
0.016
V2 0°
8° 0°
10.30
5.08
1.30
8.90
3.70
Ordering type
Marking
STPS10150CT STPS10150CT
STPS10150CG STPS10150CG
STPS10150CG-TR STPS10150CG
s EPOXY MEETS UL94, V0
Package
TO-220AB
D2PAK
D2PAK
Weight
2.2 g
1.48 g
1.48 g
Base qty
50
50
1000
Delivery mode
Tube
Tube
Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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