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MOTOROLA
SEMICONDUCTOR
TECHFNreICeAsLcDaAlTeASemiconductor,
Inc.
Order this document
by MRF5S19150/D
MRF5S19150R3 and MRF5S19150SR3 replaced by MRF5S19150HR3 and
MRF5S19150HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
MRF5S19150R3
RF Power Field Effect Transistors MRF5S19150SR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
TPISyo-pu9tic5=alC32D2-MCWAaart(rtPise,irloINDt,Q-SC=yDn1Mc4,A0P0PamgeirAnfog, r,fm1Tar=an1fcf9iec5fC8o.or7dV5eDMsDH8=zT2,h8fr2oV=uogl1ths9,1631).25 MHz
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — - 50 dB
IM3 — - 36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
Excellent Thermal Stability
Qualified Up to a Maximum of 32 V Operation
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150SR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 32 W CW
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Symbol
RθJC
Value
65
- 0.5, +15
357
2
- 65 to +150
200
100
Value (1,2)
0.49
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF5S19150R3 MRF5S19150SR3
FFoor rMMGoorGoeroetIontI:onfow:forwwmrmwwaawt.fitr.oifeonreenOseOcsnancTlaeThl.ehics.iocsPmoPrmorodduucct,t,
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ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
IDSS
1
IGSS
1
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 µAdc)
VGS(th)
2.5
2.8
3.5
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
3.8
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.24
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs — 9 —
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss — 3.1 —
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps 13 14 —
Drain Efficiency
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η 24 26 —
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
IM3
- 36.5
- 35
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
ACPR
- 50 - 48
Input Return Loss
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL — - 17 - 9
(1) Part is internally matched both on input and output.
Unit
µAdc
µAdc
µAdc
Vdc
Vdc
Vdc
S
pF
dB
%
dBc
dBc
dB
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
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+
C9 B1
R1
VGG + R3
R2
C8 C7 C6
C5 C14
++
C17 C18 C19
C20
+ + + VDD
C15 C16
C21 C22 C23
RF
INPUT
Z1
Z2
Z11
Z8 DUT Z10 Z13 Z14 C24 Z15
Z3 Z4 C4 Z5 Z6 Z7
Z12
C1 C2 C3
Z9
RF
OUTPUT
B2
+ R4
C10 C11 C12
C13 C25
++
C26 C27 C32
C33
++
C28 C29
C30 C31
Z1 1.023x 0.082Microstrip
Z9 1.280x 0.046Microstrip
Z2 0.398x 0.082Microstrip
Z10 0.090x 1.055Microstrip
Z3 0.203x 0.082Microstrip
Z11 1.125x 0.068Microstrip
Z4 0.074x 0.082Microstrip
Z12 1.125x 0.068Microstrip
Z5 0.630x 0.084Microstrip
Z13 0.505x 1.055Microstrip
Z6
0.557x 1.030x 0.237Microstrip Taper Z14
0.898x 0.105Microstrip
Z7 0.103x 1.030Microstrip
Z15 1.133x 0.082Microstrip
Z8 1.280x 0.046Microstrip
PCB
Arlon GX0300 - 55 - 22, 0.03, εr = 2.55
Figure 1. MRF5S19150 Test Circuit Schematic
Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3
C4, C5, C13, C14, C24, C25
C8, C10
C6, C12, C16, C17, C18, C27, C28, C29
C7, C11, C15, C26
C9
C23
C19, C20, C21, C22, C30, C31, C32, C33
R1
R2
R3, R4
Description
Short RF Beads
0.6 – 4.5 Variable Capacitors, Gigatrim
0.8 pF Chip Capacitor, B Case
9.1 pF Chip Capacitors, B Case
1.0 µF, 50 V SMT Tantalum Capacitors
0.1 µF Chip Capacitors, B Case
1000 pF Chip Capacitors, B Case
100 µF, 50 V Electrolytic Capacitor
470 µF, 63 V Electrolytic Capacitor
22 µF, 35 V Tantalum Capacitors
1 kW Chip Resistor
560 kW Chip Resistor
12 W Chip Resistors
MOTOROLA RF DEVICE DATA
MRF5S19150R3 MRF5S19150SR3
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C9
B1 R3 C5
VGG R1
R2 C8 C7
C6
C4
C1 C2 C3
C10 C12
C11
B2 R4 C13
MRF5S19150
Rev 4
C17 C18
C14 C19 C20 C23
C15
C16
VDD
C21 C22
C24
C26
C27
C32 C33
C25
C30 C31
C28 C29
Figure 2. MRF5S19150 Test Circuit Component Layout
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
15 40
14 Gps
35
13 η
30
12 25
11
10 IRL
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
20
−30
9 −35
8 IM3
7
ACPR
6
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
−40
−45
−50
5 −55
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
−10
−20
−30
−40
−50
−60
16
IDQ = 2100 mA
15 1700 mA
1400 mA
14
1050 mA
13
700 mA
12 VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−20
−25
−30 3rd Order
−35
−40 5th Order
−45
7th Order
−50
−55
−60
0.1
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1 10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
−15
VDD = 28 Vdc
−20 f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30 IDQ = 2100 mA
1700 mA
−35
−40
700 mA
−45
−50
−55
1
1050 mA
10
1400 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
59
58
P3dB = 53.71 dBm (234.96 W)
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51 VDD = 28 Vdc, IDQ = 1400 mA
50
Pulsed CW, 8 µsec (on), 1 msec (off)
Center Frequency = 1960 MHz
49
35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19150R3 MRF5S19150SR3
For More Information On This Product,
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