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UNISONIC TECHNOLOGIES CO., LTD
70N06
MOSFET
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
1
TO-220
The UTC 70N06 is n-channel enhancement mode
power field effect transistors with stable off-state
characteristics, fast switching speed, low thermal
resistance, usually used at telecom and computer
application.
1
TO-220F
FEATURES
* RDS(ON) = 15m@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 70N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
70N06-TA3-T
70N06L-TA3-T
70N06-TF3-T
70N06L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
70N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., LTD
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70N06
MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
Continuous Drain Current
Drain Current Pulsed (Note 1)
TC = 25
TC = 100
VGSS
ID
IDM
±20
70
56
280
V
A
A
A
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
EAS 600 mJ
EAR 20 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
10 V/ns
Total Power Dissipation (TC = 25 )
Derating Factor above 25
PD
200 W
1.4 W/
Operation Junction Temperature
TJ -55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θJC
θCS
θJA
MIN
TYP
0.5
MAX
1.2
62.5
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0 V, ID = 250 µA
BVDSS/ TJ ID = 1mA, Referenced to 25
VDS = 60 V, VGS = 0 V
IDSS VDS = 60 V, VGS = 0 V,
TJ = 150
IGSS
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 35 A
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS = 0 V, VDS = 25 V
f = 1MHz
VDD = 30V, ID =70 A,
VGS=10V, (Note 4, 5)
VDS = 60V, VGS = 10 V
ID = 48A, (Note 4, 5)
MIN TYP MAX UNIT
60 V
0.08 V/
1 µA
10 µA
100 nA
-100 nA
2.0
12
4.0 V
15 m
3300
530
80
pF
pF
pF
12 ns
79 ns
80 ns
52 ns
90 140 nC
20 35 nC
30 45 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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70N06
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
Continuous Source Current
VSD IS = 70A, VGS = 0 V
Integral Reverse p-n Junction Diode in
IS the MOSFET
D
TYP
MAX UNIT
1.4 V
70
Pulsed Source Current ISM G
A
280
Reverse Recovery Time
tRR IS = 70A, VGS = 0 V
Reverse Recovery Charge
QRR dIF / dt = 100 A/µs
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, IAS=70A, RG=20, Starting TJ=25
3. ISD48A, di/dt300A/µs, VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300µs,Duty Cycle2%
5. Essentially independent of operating temperature.
S
90 ns
300 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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